Microstructure properties of Ba0.5Sr0.5TiO3 thin films on Si with conductive SrRuO3 bottom electrodes

Q. X. Jia; H. H. Kung; X. D. Wu

doi:10.1016/S0040-6090(96)09448-5

Microstructure properties of Ba_0.5Sr_0.5TiO₃ thin films on Si with conductive SrRuO₃ bottom electrodes

Q. X. Jia
, H. H. Kung
, X. D. Wu

Department of Materials Design and Innovation

University at Buffalo

Los Alamos National Laboratory Materials Science and Technology Division
Symyx Technologies

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Quaternary Ba_0.5Sr_0.5TiO₃ (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO₃ (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO₂ and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO.

Original language	English
Pages (from-to)	115-118
Number of pages	4
Journal	Thin Solid Films
Volume	299
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09448-5
State	Published - May 15 1997

Keywords

Capacitors
Dielectrics
Laser ablation
Structural properties

Access to Document

10.1016/S0040-6090(96)09448-5

Cite this

@article{2e6322b7911f4947b25fef5d7acaefbe,

title = "Microstructure properties of Ba0.5Sr0.5TiO3 thin films on Si with conductive SrRuO3 bottom electrodes",

abstract = "Quaternary Ba0.5Sr0.5TiO3 (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO3 (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO2 and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO.",

keywords = "Capacitors, Dielectrics, Laser ablation, Structural properties",

author = "Jia, \{Q. X.\} and Kung, \{H. H.\} and Wu, \{X. D.\}",

year = "1997",

month = may,

day = "15",

doi = "10.1016/S0040-6090(96)09448-5",

language = "English",

volume = "299",

pages = "115--118",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Microstructure properties of Ba0.5Sr0.5TiO3 thin films on Si with conductive SrRuO3 bottom electrodes

AU - Jia, Q. X.

AU - Kung, H. H.

AU - Wu, X. D.

PY - 1997/5/15

Y1 - 1997/5/15

N2 - Quaternary Ba0.5Sr0.5TiO3 (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO3 (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO2 and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO.

AB - Quaternary Ba0.5Sr0.5TiO3 (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO3 (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO2 and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO.

KW - Capacitors

KW - Dielectrics

KW - Laser ablation

KW - Structural properties

UR - https://www.scopus.com/pages/publications/0031130912

U2 - 10.1016/S0040-6090(96)09448-5

DO - 10.1016/S0040-6090(96)09448-5

M3 - Article

SN - 0040-6090

VL - 299

SP - 115

EP - 118

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Microstructure properties of Ba_0.5Sr_0.5TiO₃ thin films on Si with conductive SrRuO₃ bottom electrodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this