Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process

David C. Laney; Lawrence E. Larson; Paul Chan; John Malinowski; David Harame; Seshu Subbanna; Rich Volant; Michael Case

doi:10.1109/22.939934

Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process

David C. Laney
, Lawrence E. Larson
, Paul Chan
, John Malinowski
, David Harame
, Seshu Subbanna
, Rich Volant
, Michael Case

NY Creates Research Foundation

NY Creates

University of California at San Diego
HRL Laboratories
Qualcomm Incorporated
Global Foundries, Inc.
IBM

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Mierostrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 Ghz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 Db and a measured coupling coefficient (k) of 0.6 at 5.5 Ghz and 0.4 up to 12.5 Ghz are also discussed.

Original language	English
Pages (from-to)	1507-1510
Number of pages	4
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	49
Issue number	8
DOIs	https://doi.org/10.1109/22.939934
State	Published - Aug 2001
Event	2000 IEEE Radio and Wireless Conference (RAWCON) - Denver, CO, United States Duration: Sep 10 2001 → Oct 13 2001

Keywords

Inductors
Integrated circuit fabrication
MMICs
Transformers
Transmission lines

Access to Document

10.1109/22.939934

Cite this

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title = "Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process",

abstract = "Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Mierostrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 Ghz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 Db and a measured coupling coefficient (k) of 0.6 at 5.5 Ghz and 0.4 up to 12.5 Ghz are also discussed.",

keywords = "Inductors, Integrated circuit fabrication, MMICs, Transformers, Transmission lines",

author = "Laney, \{David C.\} and Larson, \{Lawrence E.\} and Paul Chan and John Malinowski and David Harame and Seshu Subbanna and Rich Volant and Michael Case",

year = "2001",

month = aug,

doi = "10.1109/22.939934",

language = "English",

volume = "49",

pages = "1507--1510",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

note = "2000 IEEE Radio and Wireless Conference (RAWCON) ; Conference date: 10-09-2001 Through 13-10-2001",

}

TY - JOUR

T1 - Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process

AU - Laney, David C.

AU - Larson, Lawrence E.

AU - Chan, Paul

AU - Malinowski, John

AU - Harame, David

AU - Subbanna, Seshu

AU - Volant, Rich

AU - Case, Michael

PY - 2001/8

Y1 - 2001/8

N2 - Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Mierostrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 Ghz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 Db and a measured coupling coefficient (k) of 0.6 at 5.5 Ghz and 0.4 up to 12.5 Ghz are also discussed.

AB - Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Mierostrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 Ghz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 Db and a measured coupling coefficient (k) of 0.6 at 5.5 Ghz and 0.4 up to 12.5 Ghz are also discussed.

KW - Inductors

KW - Integrated circuit fabrication

KW - MMICs

KW - Transformers

KW - Transmission lines

UR - https://www.scopus.com/pages/publications/0035417287

U2 - 10.1109/22.939934

DO - 10.1109/22.939934

M3 - Conference article

SN - 0018-9480

VL - 49

SP - 1507

EP - 1510

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 8

T2 - 2000 IEEE Radio and Wireless Conference (RAWCON)

Y2 - 10 September 2001 through 13 October 2001

ER -

Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process

Abstract

Keywords

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