MOLECULAR BEAM EPITAXY OF Ge-GaAs SUPERLATTICES.

C. A. Chang; W. K. Chu; E. E. Mendez; L. L. Chang; L. Esaki

doi:10.1116/1.571128

MOLECULAR BEAM EPITAXY OF Ge-GaAs SUPERLATTICES.

C. A. Chang
, W. K. Chu
, E. E. Mendez
, L. L. Chang
, L. Esaki

Physics and Astronomy

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

The authors have fabricated Ge-GaAs superlattices on (100) GaAs over a wide range of individual layer thickness by molecular beam epitaxy. The superlattices have excellent surface finish, and high epitaxial quality in terms of low defect density and well-resolved periodicity. The effect of interdiffusion significantly affects the periodic structure only for ultrathin layers of the order of a few tens of angstroms.

Original language	English
Pages (from-to)	567-570
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571128
State	Published - 1981
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981

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title = "MOLECULAR BEAM EPITAXY OF Ge-GaAs SUPERLATTICES.",

abstract = "The authors have fabricated Ge-GaAs superlattices on (100) GaAs over a wide range of individual layer thickness by molecular beam epitaxy. The superlattices have excellent surface finish, and high epitaxial quality in terms of low defect density and well-resolved periodicity. The effect of interdiffusion significantly affects the periodic structure only for ultrathin layers of the order of a few tens of angstroms.",

author = "Chang, \{C. A.\} and Chu, \{W. K.\} and Mendez, \{E. E.\} and Chang, \{L. L.\} and L. Esaki",

year = "1981",

doi = "10.1116/1.571128",

language = "English",

volume = "19",

pages = "567--570",

journal = "Journal of vacuum science \& technology",

issn = "0022-5355",

number = "3",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

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T1 - MOLECULAR BEAM EPITAXY OF Ge-GaAs SUPERLATTICES.

AU - Chang, C. A.

AU - Chu, W. K.

AU - Mendez, E. E.

AU - Chang, L. L.

AU - Esaki, L.

PY - 1981

Y1 - 1981

N2 - The authors have fabricated Ge-GaAs superlattices on (100) GaAs over a wide range of individual layer thickness by molecular beam epitaxy. The superlattices have excellent surface finish, and high epitaxial quality in terms of low defect density and well-resolved periodicity. The effect of interdiffusion significantly affects the periodic structure only for ultrathin layers of the order of a few tens of angstroms.

AB - The authors have fabricated Ge-GaAs superlattices on (100) GaAs over a wide range of individual layer thickness by molecular beam epitaxy. The superlattices have excellent surface finish, and high epitaxial quality in terms of low defect density and well-resolved periodicity. The effect of interdiffusion significantly affects the periodic structure only for ultrathin layers of the order of a few tens of angstroms.

UR - https://www.scopus.com/pages/publications/0019608576

U2 - 10.1116/1.571128

DO - 10.1116/1.571128

M3 - Conference article

SN - 0022-5355

VL - 19

SP - 567

EP - 570

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

MOLECULAR BEAM EPITAXY OF Ge-GaAs SUPERLATTICES.

Abstract

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