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Monolithic integration of an electroabsorption modulator into a GaAs-based duocavity VCSEL for resonance-free modulation

  • SUNY Albany
  • Intel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel device concept of Vertical Cavity Surface Emitting Laser (VCSEL) with integrated modulator is demonstrated. Gain and absorption media are positioned in two Fabri-Perot cavities formed by three DBR stacks. Tuning relative spectral positions of two cavities resonances allows operation without optoelectronic feedback, extending modulation response well beyond optoelectronic resonance frequency.

Original languageEnglish
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
StatePublished - 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Conference

Conference23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Country/TerritoryUnited States
CityChicago, IL
Period04/14/0804/17/08

Keywords

  • Fabri-Perot Cavities
  • High-frequency modulation
  • Semiconductor lasers
  • Vertical cavity Surface Emitting Laser (VCSEL)

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