Monolithic transformers for silicon RF IC design

Dickson T.S. Cheung; John R. Long; R. A. Hadaway; D. L. Harame

Monolithic transformers for silicon RF IC design

Dickson T.S. Cheung
, John R. Long
, R. A. Hadaway
, D. L. Harame

NY Creates Research Foundation

NY Creates

University of Toronto

Research output: Contribution to conference › Paper › peer-review

21 Scopus citations

Abstract

The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.

Original language	English
Pages	105-108
Number of pages	4
State	Published - 1998
Event	Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 27 1998 → Sep 29 1998

Conference

Conference	Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	09/27/98 → 09/29/98

Cite this

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title = "Monolithic transformers for silicon RF IC design",

abstract = "The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.",

author = "Cheung, \{Dickson T.S.\} and Long, \{John R.\} and Hadaway, \{R. A.\} and Harame, \{D. L.\}",

year = "1998",

language = "English",

pages = "105--108",

note = "Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 27-09-1998 Through 29-09-1998",

}

TY - CONF

T1 - Monolithic transformers for silicon RF IC design

AU - Cheung, Dickson T.S.

AU - Long, John R.

AU - Hadaway, R. A.

AU - Harame, D. L.

PY - 1998

Y1 - 1998

N2 - The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.

AB - The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.

UR - https://www.scopus.com/pages/publications/0032307872

M3 - Paper

SP - 105

EP - 108

T2 - Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 27 September 1998 through 29 September 1998

ER -

Monolithic transformers for silicon RF IC design

Abstract

Conference

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