@inproceedings{d624080e0b33427fab39123bb17b571d,
title = "Mosaicity and wafer bending in SiC wafers as measured by double and triple crystal X-ray rocking curve and peak position maps",
abstract = "Double and triple crystal rocking curve and peak position maps are constructed for a 4H-SiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90°, and an asymmetric (1 2 {\=3} 6) reflection for the wafer in the normal position. These measurements were corrected for the 'wobble' in the instrument by scanning a 4{"} (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.",
keywords = "High resolution x-ray diffraction, Peak position maps, Rocking curve maps",
author = "Kirchner, \{K. W.\} and Jones, \{K. A.\} and Derenge, \{M. A.\} and M. Dudley and A. Powell",
year = "2007",
doi = "10.4028/0-87849-442-1.213",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "213--218",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
note = "6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 ; Conference date: 03-09-2006 Through 07-09-2007",
}