@inproceedings{7c6b1574908544439dcf51d8660119be,
title = "Multilayer busbar design for a Si IGBT and SiC MOSFET hybrid switch based 100 kW three-level T-type PEBB",
abstract = "In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link capacitor bank and the semiconductor devices while introducing ultra-low stray inductance compared to state-of-the-art designs in the current commutation loop (CCL) and also ensure symmetrical CCLs. This ensures low voltage stress operation of the SiC devices and enables high switching frequency operation of the inverter. The design was verified using 3-D finite element analysis (FEA) and switching experiments.",
keywords = "Busbar, Multi-layer, PEBB, Three-level T-type",
author = "Amol Deshpande and Fang Luo",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 ; Conference date: 30-10-2017 Through 01-11-2017",
year = "2017",
month = dec,
day = "7",
doi = "10.1109/WiPDA.2017.8170496",
language = "English",
series = "2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "20--24",
booktitle = "2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017",
}