Multivalued anisotropy of electric conductivity in Si near to the <111>-direction

The current voltage characteristics and the dependence of the transverse electric field on applied voltage is studied experimentally and theoretically for n-Si at 27 K for the current close to the <111>-direction. A solution in form of a loop is split off from the solution with nearly equal carrier population in all three valleys and corresponds to predominant population of only one valley. The solutions corresponding to predominant population of either one of the three valleys may coexist in the sample in the form of layers parallel to the current. A transverse magnetic induction B may change the size of the layers and by appropriate B it is possible to induce either one of these three layers or any combination of them into the sample.