TY - GEN
T1 - Nearly ideal Schottky contacts of n-InP
AU - Shi, Z. Q.
AU - Anderson, W. A.
PY - 1991
Y1 - 1991
N2 - Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C2-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.
AB - Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C2-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.
UR - https://www.scopus.com/pages/publications/0026407696
M3 - Conference contribution
SN - 0879426268
T3 - Third Int Conf Indium Phosphide Relat Mater
SP - 535
EP - 538
BT - Third Int Conf Indium Phosphide Relat Mater
PB - Publ by IEEE
T2 - Third International Conference on Indium Phosphide and Related Materials
Y2 - 8 April 1991 through 11 April 1991
ER -