New lateral insulated-gate bipolar transistor on silicon-on-insulator

To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.