Nitride passivation of the interface between high-k dielectrics and SiGe

Kasra Sardashti; Kai Ting Hu; Kechao Tang; Shailesh Madisetti; Paul McIntyre; Serge Oktyabrsky; Shariq Siddiqui; Bhagawan Sahu; Naomi Yoshida; Jessica Kachian; Lin Dong; Bernd Fruhberger; Andrew C. Kummel

doi:10.1063/1.4939460

Nitride passivation of the interface between high-k dielectrics and SiGe

Kasra Sardashti
, Kai Ting Hu
, Kechao Tang
, Shailesh Madisetti
, Paul McIntyre
, Serge Oktyabrsky
, Shariq Siddiqui
, Bhagawan Sahu
, Naomi Yoshida
, Jessica Kachian
, Lin Dong
, Bernd Fruhberger
, Andrew C. Kummel

Nanoscale Science and Engineering

University at Albany

University of California at San Diego
Stanford University
SUNY Polytechnic Institute
Inc.
Applied Materials Incorporated

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

In-situ direct ammonia (NH₃) plasma nitridation has been used to passivate the Al₂O₃/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al₂O₃/SiGe interface shows that NH₃ plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Original language	English
Article number	011604
Journal	Applied Physics Letters
Volume	108
Issue number	1
DOIs	https://doi.org/10.1063/1.4939460
State	Published - Jan 4 2016

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title = "Nitride passivation of the interface between high-k dielectrics and SiGe",

abstract = "In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.",

author = "Kasra Sardashti and Hu, \{Kai Ting\} and Kechao Tang and Shailesh Madisetti and Paul McIntyre and Serge Oktyabrsky and Shariq Siddiqui and Bhagawan Sahu and Naomi Yoshida and Jessica Kachian and Lin Dong and Bernd Fruhberger and Kummel, \{Andrew C.\}",

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doi = "10.1063/1.4939460",

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T1 - Nitride passivation of the interface between high-k dielectrics and SiGe

AU - Sardashti, Kasra

AU - Hu, Kai Ting

AU - Tang, Kechao

AU - Madisetti, Shailesh

AU - McIntyre, Paul

AU - Oktyabrsky, Serge

AU - Siddiqui, Shariq

AU - Sahu, Bhagawan

AU - Yoshida, Naomi

AU - Kachian, Jessica

AU - Dong, Lin

AU - Fruhberger, Bernd

AU - Kummel, Andrew C.

PY - 2016/1/4

Y1 - 2016/1/4

N2 - In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

AB - In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

UR - https://www.scopus.com/pages/publications/84954116644

U2 - 10.1063/1.4939460

DO - 10.1063/1.4939460

M3 - Article

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011604

ER -

Nitride passivation of the interface between high-k dielectrics and SiGe

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