Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy

Lei Meng; Satyavolu S.Papa Rao; Charanjit S. Bhatia; Steven E. Steen; Alan G. Street; Jacob C.H. Phang

doi:10.1109/pvsc-vol2.2012.6656761

Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy

Lei Meng
, Satyavolu S.Papa Rao
, Charanjit S. Bhatia
, Steven E. Steen
, Alan G. Street
, Jacob C.H. Phang

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects.

Original language	English
Title of host publication	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
Publisher	Institute of Electrical and Electronics Engineers Inc.
Edition	PART 2
ISBN (Print)	9781467328883
DOIs	https://doi.org/10.1109/pvsc-vol2.2012.6656761
State	Published - 2012
Event	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Number	PART 2

Conference

Conference	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	06/3/12 → 06/8/12

Keywords

Multicrystalline silicon
nondestructive defect characterization
saw-damage etch
scanning electron acoustic microscopy (SEAM)

Access to Document

10.1109/pvsc-vol2.2012.6656761

Cite this

Meng, L., Rao, S. S. P., Bhatia, C. S., Steen, S. E., Street, A. G., & Phang, J. C. H. (2012). Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. In 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 (PART 2 ed.). Article 2218579 (Conference Record of the IEEE Photovoltaic Specialists Conference; No. PART 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc-vol2.2012.6656761

Meng, Lei ; Rao, Satyavolu S.Papa ; Bhatia, Charanjit S. et al. / Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2. ed. Institute of Electrical and Electronics Engineers Inc., 2012. (Conference Record of the IEEE Photovoltaic Specialists Conference; PART 2).

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title = "Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy",

abstract = "Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects.",

keywords = "Multicrystalline silicon, nondestructive defect characterization, saw-damage etch, scanning electron acoustic microscopy (SEAM)",

author = "Lei Meng and Rao, \{Satyavolu S.Papa\} and Bhatia, \{Charanjit S.\} and Steen, \{Steven E.\} and Street, \{Alan G.\} and Phang, \{Jacob C.H.\}",

year = "2012",

doi = "10.1109/pvsc-vol2.2012.6656761",

language = "English",

isbn = "9781467328883",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "PART 2",

booktitle = "2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012",

edition = "PART 2",

note = "2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Meng, L, Rao, SSP, Bhatia, CS, Steen, SE, Street, AG & Phang, JCH 2012, Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. in 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2 edn, 2218579, Conference Record of the IEEE Photovoltaic Specialists Conference, no. PART 2, Institute of Electrical and Electronics Engineers Inc., 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 06/3/12. https://doi.org/10.1109/pvsc-vol2.2012.6656761

Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. / Meng, Lei; Rao, Satyavolu S.Papa; Bhatia, Charanjit S. et al.
2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2. ed. Institute of Electrical and Electronics Engineers Inc., 2012. 2218579 (Conference Record of the IEEE Photovoltaic Specialists Conference; No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy

AU - Meng, Lei

AU - Rao, Satyavolu S.Papa

AU - Bhatia, Charanjit S.

AU - Steen, Steven E.

AU - Street, Alan G.

AU - Phang, Jacob C.H.

PY - 2012

Y1 - 2012

N2 - Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects.

AB - Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects.

KW - Multicrystalline silicon

KW - nondestructive defect characterization

KW - saw-damage etch

KW - scanning electron acoustic microscopy (SEAM)

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DO - 10.1109/pvsc-vol2.2012.6656761

M3 - Conference contribution

SN - 9781467328883

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Meng L, Rao SSP, Bhatia CS, Steen SE, Street AG, Phang JCH. Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. In 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2 ed. Institute of Electrical and Electronics Engineers Inc. 2012. 2218579. (Conference Record of the IEEE Photovoltaic Specialists Conference; PART 2). doi: 10.1109/pvsc-vol2.2012.6656761

Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy

Abstract

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Conference

Keywords

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