Nondestructive nanomechanical imaging: Cross-sectional ultrasonic force microscopy of integrated circuit test structures

L. Muthuswami; Y. Zheng; R. E. Geer

doi:10.1117/12.483994

Nondestructive nanomechanical imaging: Cross-sectional ultrasonic force microscopy of integrated circuit test structures

L. Muthuswami
, Y. Zheng
, R. E. Geer

Nanoscale Science and Engineering

University at Albany

SUNY Albany

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO ₂ integrated circuit test structure. The SiO₂ trench walls were coated with a thin (∼ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO₂ and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.

Original language	English
Pages (from-to)	54-62
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5045
DOIs	https://doi.org/10.1117/12.483994
State	Published - 2003
Event	PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Testing, Reliability, and Application of Micro- and Nano-Material Systems - San Diego, CA, United States Duration: Mar 3 2003 → Mar 5 2003

Keywords

IC test structures
Mechanical imaging
Nanomechanics
Ultrasonic force microscopy

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10.1117/12.483994

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title = "Nondestructive nanomechanical imaging: Cross-sectional ultrasonic force microscopy of integrated circuit test structures",

abstract = "A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO 2 integrated circuit test structure. The SiO2 trench walls were coated with a thin (∼ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO2 and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.",

keywords = "IC test structures, Mechanical imaging, Nanomechanics, Ultrasonic force microscopy",

author = "L. Muthuswami and Y. Zheng and Geer, \{R. E.\}",

year = "2003",

doi = "10.1117/12.483994",

language = "English",

volume = "5045",

pages = "54--62",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Testing, Reliability, and Application of Micro- and Nano-Material Systems ; Conference date: 03-03-2003 Through 05-03-2003",

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TY - JOUR

T1 - Nondestructive nanomechanical imaging

T2 - PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Testing, Reliability, and Application of Micro- and Nano-Material Systems

AU - Muthuswami, L.

AU - Zheng, Y.

AU - Geer, R. E.

PY - 2003

Y1 - 2003

N2 - A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO 2 integrated circuit test structure. The SiO2 trench walls were coated with a thin (∼ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO2 and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.

AB - A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO 2 integrated circuit test structure. The SiO2 trench walls were coated with a thin (∼ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO2 and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.

KW - IC test structures

KW - Mechanical imaging

KW - Nanomechanics

KW - Ultrasonic force microscopy

UR - https://www.scopus.com/pages/publications/0242441489

U2 - 10.1117/12.483994

DO - 10.1117/12.483994

M3 - Conference article

SN - 0277-786X

VL - 5045

SP - 54

EP - 62

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 3 March 2003 through 5 March 2003

ER -

Nondestructive nanomechanical imaging: Cross-sectional ultrasonic force microscopy of integrated circuit test structures

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