Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

S. F. Nelson; K. Ismail; J. J. Nocera; F. F. Fang; E. E. Mendez; J. O. Chu; B. S. Meyerson

doi:10.1063/1.107670

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

S. F. Nelson
, K. Ismail
, J. J. Nocera
, F. F. Fang
, E. E. Mendez
, J. O. Chu
, B. S. Meyerson

Physics and Astronomy

Stony Brook University

IBM

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm²/V s.

Original language	English
Pages (from-to)	64-66
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	1
DOIs	https://doi.org/10.1063/1.107670
State	Published - 1992

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title = "Observation of the fractional quantum Hall effect in Si/SiGe heterostructures",

abstract = "We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.",

author = "Nelson, \{S. F.\} and K. Ismail and Nocera, \{J. J.\} and Fang, \{F. F.\} and Mendez, \{E. E.\} and Chu, \{J. O.\} and Meyerson, \{B. S.\}",

year = "1992",

doi = "10.1063/1.107670",

language = "English",

volume = "61",

pages = "64--66",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "1",

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TY - JOUR

T1 - Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

AU - Nelson, S. F.

AU - Ismail, K.

AU - Nocera, J. J.

AU - Fang, F. F.

AU - Mendez, E. E.

AU - Chu, J. O.

AU - Meyerson, B. S.

PY - 1992

Y1 - 1992

N2 - We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.

AB - We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.

UR - https://www.scopus.com/pages/publications/0002762162

U2 - 10.1063/1.107670

DO - 10.1063/1.107670

M3 - Article

SN - 0003-6951

VL - 61

SP - 64

EP - 66

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

Abstract

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