OHMIC CONTACTS TO n-GaAs WITH GERMANIDE OVERLAYERS.

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Original language	English
Pages (from-to)	115-118
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1983.190454
State	Published - 1983

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@article{93a9701c53124923926692ff557bffb0,

title = "OHMIC CONTACTS TO n-GaAs WITH GERMANIDE OVERLAYERS.",

author = "Sandip Tiwari and Kuan, \{Tung Sheng\} and Elaine Tierney",

year = "1983",

doi = "10.1109/iedm.1983.190454",

language = "English",

pages = "115--118",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - OHMIC CONTACTS TO n-GaAs WITH GERMANIDE OVERLAYERS.

AU - Tiwari, Sandip

AU - Kuan, Tung Sheng

AU - Tierney, Elaine

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0020943786

U2 - 10.1109/iedm.1983.190454

DO - 10.1109/iedm.1983.190454

M3 - Conference article

SN - 0163-1918

SP - 115

EP - 118

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -