On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs

Yun Shi; Guofu Niu; John D. Cressler; David L. Harame

doi:10.1109/TED.2003.813237

On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs

Yun Shi
, Guofu Niu
, John D. Cressler
, David L. Harame

NY Creates Research Foundation

NY Creates

Auburn University
Georgia Institute of Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We investigate the modeling of heavy-doping induced band-gap narrowing (BGN) in scaled SiGe HBTs featuring high base doping. An inconsistency between simulation results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct this problem, and is successfully implemented in DESSIS, enabling consistency in the dc and RF characteristics simulated using either Boltzmann or Fermi-Dirac statistics in the presence of high doping. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency versus bias current density characteristics is also addressed.

Original language	English
Pages (from-to)	1370-1377
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	5
DOIs	https://doi.org/10.1109/TED.2003.813237
State	Published - May 2003

Keywords

Band-gap narrowing (BGN)
Device simulation
SiGe HBT

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10.1109/TED.2003.813237

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title = "On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs",

abstract = "We investigate the modeling of heavy-doping induced band-gap narrowing (BGN) in scaled SiGe HBTs featuring high base doping. An inconsistency between simulation results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct this problem, and is successfully implemented in DESSIS, enabling consistency in the dc and RF characteristics simulated using either Boltzmann or Fermi-Dirac statistics in the presence of high doping. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency versus bias current density characteristics is also addressed.",

keywords = "Band-gap narrowing (BGN), Device simulation, SiGe HBT",

author = "Yun Shi and Guofu Niu and Cressler, \{John D.\} and Harame, \{David L.\}",

year = "2003",

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doi = "10.1109/TED.2003.813237",

language = "English",

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pages = "1370--1377",

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AU - Shi, Yun

AU - Niu, Guofu

AU - Cressler, John D.

AU - Harame, David L.

PY - 2003/5

Y1 - 2003/5

N2 - We investigate the modeling of heavy-doping induced band-gap narrowing (BGN) in scaled SiGe HBTs featuring high base doping. An inconsistency between simulation results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct this problem, and is successfully implemented in DESSIS, enabling consistency in the dc and RF characteristics simulated using either Boltzmann or Fermi-Dirac statistics in the presence of high doping. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency versus bias current density characteristics is also addressed.

AB - We investigate the modeling of heavy-doping induced band-gap narrowing (BGN) in scaled SiGe HBTs featuring high base doping. An inconsistency between simulation results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct this problem, and is successfully implemented in DESSIS, enabling consistency in the dc and RF characteristics simulated using either Boltzmann or Fermi-Dirac statistics in the presence of high doping. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency versus bias current density characteristics is also addressed.

KW - Band-gap narrowing (BGN)

KW - Device simulation

KW - SiGe HBT

UR - https://www.scopus.com/pages/publications/0043175169

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DO - 10.1109/TED.2003.813237

M3 - Article

SN - 0018-9383

VL - 50

SP - 1370

EP - 1377

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs

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Keywords

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