On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs

E. N. Wu; A. van der Ziel

doi:10.1016/0038-1101(84)90066-2

On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs

E. N. Wu
, A. van der Ziel

Electrical and Computer Eng

Binghamton University

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

Abstract

The input conductance g_gs and its associate noise spectrum S_g(f{hook}) in MOSFETs is evaluated numerically and expressed in terms of a doping parameter φ. The results augment earlier calculations by Klaassen. For g_gs a function F₂(φ) is introduced that depends only slowly on φ and on the bias voltages V_g′ and V_b′. Expressing the noise in terms of the parameter β = S_g(f{hook}) (4kTg_gs), it is found that β is practically independent of φ, V_g′ and V_b′.

Original language	English
Pages (from-to)	945-946
Number of pages	2
Journal	Solid-State Electronics
Volume	27
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(84)90066-2
State	Published - Nov 1984

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title = "On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs",

abstract = "The input conductance ggs and its associate noise spectrum Sg(f\{hook\}) in MOSFETs is evaluated numerically and expressed in terms of a doping parameter φ. The results augment earlier calculations by Klaassen. For ggs a function F2(φ) is introduced that depends only slowly on φ and on the bias voltages Vg′ and Vb′. Expressing the noise in terms of the parameter β = Sg(f\{hook\}) (4kTggs), it is found that β is practically independent of φ, Vg′ and Vb′.",

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AU - Wu, E. N.

AU - van der Ziel, A.

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N2 - The input conductance ggs and its associate noise spectrum Sg(f{hook}) in MOSFETs is evaluated numerically and expressed in terms of a doping parameter φ. The results augment earlier calculations by Klaassen. For ggs a function F2(φ) is introduced that depends only slowly on φ and on the bias voltages Vg′ and Vb′. Expressing the noise in terms of the parameter β = Sg(f{hook}) (4kTggs), it is found that β is practically independent of φ, Vg′ and Vb′.

AB - The input conductance ggs and its associate noise spectrum Sg(f{hook}) in MOSFETs is evaluated numerically and expressed in terms of a doping parameter φ. The results augment earlier calculations by Klaassen. For ggs a function F2(φ) is introduced that depends only slowly on φ and on the bias voltages Vg′ and Vb′. Expressing the noise in terms of the parameter β = Sg(f{hook}) (4kTggs), it is found that β is practically independent of φ, Vg′ and Vb′.

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U2 - 10.1016/0038-1101(84)90066-2

DO - 10.1016/0038-1101(84)90066-2

M3 - Article

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SP - 945

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs

Abstract

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