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Options for high index fluids for third generation 193i lithography

  • Seth Kruger
  • , Srividya Revuru
  • , Shao Zhong Zhang
  • , Dimitri D. Vaughn
  • , Eric Block
  • , Paul Zimmerman
  • , Robert L. Brainard

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Successful fluids for use in 3rd generation 193 nm immersion lithography must have refractive indices of ≥ 1.80 at 193 nm, ≤ 0.15/cm absorbance at 193 nm, and be photochemically inert to 193 nm radiation. Various classes of organic compounds were prepared and evaluated for use as 3 rd generation 193 nm immersion fluids. Functional groups that were evaluated included: sulfones, sulfoxides, sulfonic acids, ammonium sulfonate salts, alkanes, alkyl chlorides, alkynes, and nitriles. Several compounds were synthesized including three sulfone and three sulfonic acid compounds. Other commercially available compounds of interest underwent extensive purification prior to evaluation. Although this work did not lead to any specific solutions to the challenge of identifying 3rd generation 193 nm immersion fluids, it can be concluded that high density hydrocarbons based on cubane may have the best chance of meeting these goals.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXV
DOIs
StatePublished - 2008
EventAdvances in Resist Materials and Processing Technology XXV - San Jose, CA, United States
Duration: Feb 25 2008Feb 27 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6923

Conference

ConferenceAdvances in Resist Materials and Processing Technology XXV
Country/TerritoryUnited States
CitySan Jose, CA
Period02/25/0802/27/08

Keywords

  • Absorbance
  • HIF
  • High index fluids
  • Immersion lithography
  • Index of refraction

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