Packaging and integration of DBC-based SiC hybrid power module in 379W/in3 DC/DC converter

Teng Liu; Yue Xie; Yuxiong Li; Cai Chen; Yong Kang; Li Peng; Yingzhuo Chen; Fang Luo

doi:10.1109/IFEEC.2017.7992402

Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter

Teng Liu
, Yue Xie
, Yuxiong Li
, Cai Chen
, Yong Kang
, Li Peng
, Yingzhuo Chen
, Fang Luo

Electrical Engineering

Stony Brook University

Huazhong University of Science and Technology
Ohio State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size. The parasitic inductance of power loop is only 3.38 nH. The passive device and gate drive circuit can be easily integrated on the PCB. Based on the idea, a highly integrated 2.5kW 300 kHz TCM synchronous rectification (SR) is designed. The power density achieves 379 W/in³ and maximum efficiency reaches 98.4%.

Original language	English
Title of host publication	2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2250-2255
Number of pages	6
ISBN (Electronic)	9781509051571
DOIs	https://doi.org/10.1109/IFEEC.2017.7992402
State	Published - Jul 25 2017
Event	3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 - Kaohsiung, Taiwan, Province of China Duration: Jun 3 2017 → Jun 7 2017

Publication series

Name	2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

Conference

Conference	3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	06/3/17 → 06/7/17

Keywords

TCM
high power density
hybrid packaging module
wide band gap semiconductor

Access to Document

10.1109/IFEEC.2017.7992402

Cite this

Liu, T., Xie, Y., Li, Y., Chen, C., Kang, Y., Peng, L., Chen, Y., & Luo, F. (2017). Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 (pp. 2250-2255). Article 7992402 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFEEC.2017.7992402

Liu, Teng ; Xie, Yue ; Li, Yuxiong et al. / Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter. 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 2250-2255 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).

@inproceedings{84b23cbf0fef43c497552d5b57f3080e,

title = "Packaging and integration of DBC-based SiC hybrid power module in 379W/in3 DC/DC converter",

abstract = "A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size. The parasitic inductance of power loop is only 3.38 nH. The passive device and gate drive circuit can be easily integrated on the PCB. Based on the idea, a highly integrated 2.5kW 300 kHz TCM synchronous rectification (SR) is designed. The power density achieves 379 W/in3 and maximum efficiency reaches 98.4\%.",

keywords = "TCM, high power density, hybrid packaging module, wide band gap semiconductor",

author = "Teng Liu and Yue Xie and Yuxiong Li and Cai Chen and Yong Kang and Li Peng and Yingzhuo Chen and Fang Luo",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 ; Conference date: 03-06-2017 Through 07-06-2017",

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Liu, T, Xie, Y, Li, Y, Chen, C, Kang, Y, Peng, L, Chen, Y & Luo, F 2017, Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter. in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017., 7992402, 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Institute of Electrical and Electronics Engineers Inc., pp. 2250-2255, 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Kaohsiung, Taiwan, Province of China, 06/3/17. https://doi.org/10.1109/IFEEC.2017.7992402

Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter. / Liu, Teng; Xie, Yue; Li, Yuxiong et al.
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2250-2255 7992402 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Liu, Teng

AU - Xie, Yue

AU - Li, Yuxiong

AU - Chen, Cai

AU - Kang, Yong

AU - Peng, Li

AU - Chen, Yingzhuo

AU - Luo, Fang

PY - 2017/7/25

Y1 - 2017/7/25

N2 - A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size. The parasitic inductance of power loop is only 3.38 nH. The passive device and gate drive circuit can be easily integrated on the PCB. Based on the idea, a highly integrated 2.5kW 300 kHz TCM synchronous rectification (SR) is designed. The power density achieves 379 W/in3 and maximum efficiency reaches 98.4%.

AB - A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size. The parasitic inductance of power loop is only 3.38 nH. The passive device and gate drive circuit can be easily integrated on the PCB. Based on the idea, a highly integrated 2.5kW 300 kHz TCM synchronous rectification (SR) is designed. The power density achieves 379 W/in3 and maximum efficiency reaches 98.4%.

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KW - high power density

KW - hybrid packaging module

KW - wide band gap semiconductor

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DO - 10.1109/IFEEC.2017.7992402

M3 - Conference contribution

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SP - 2250

EP - 2255

BT - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

Y2 - 3 June 2017 through 7 June 2017

ER -

Liu T, Xie Y, Li Y, Chen C, Kang Y, Peng L et al. Packaging and integration of DBC-based SiC hybrid power module in 379W/in³ DC/DC converter. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2250-2255. 7992402. (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). doi: 10.1109/IFEEC.2017.7992402