@inproceedings{d2a1614dd1c94de2971c6808d0510e29,
title = "Performance and variability comparisons between multi-gate FETs and planar SOI transistors",
abstract = "This paper compares the performance and inter-die variability of doped and undoped channel Multiple-Gate FETs (MUGFETs) with respect to planar SOI devices. We show that doped-channel FinFETs have equivalent variability to narrow-width planar devices. As such, transitions to FinFETs for narrow-width devices will likely incur minimal variability impact. To match the low variability of wide-width planar devices, conversions to undoped channel FinFETs will be necessary. Furthermore, good short-channel control has to be maintained since undoped channel devices exhibit increase sensitivity to Tbody relative to doped channel FinFETs due to enhanced fully-depleted channel electrostatics.",
author = "Thean, \{A. V.Y.\} and Shi, \{Z. H.\} and L. Mathew and T. Stephens and H. Desjardin and C. Parker and T. White and M. Stoker and L. Prabhu and R. Garcia and Nguyen, \{B. Y.\} and S. Murphy and R. Rai and J. Conner and White, \{B. E.\} and S. Venkatesan",
year = "2006",
doi = "10.1109/IEDM.2006.346923",
language = "English",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}