Phase diagrams of Bi 1-xSb x thin films with different growth orientations

Shuang Tang; M. S. Dresselhaus

doi:10.1103/PhysRevB.86.075436

Phase diagrams of Bi _1-xSb _x thin films with different growth orientations

Shuang Tang
, M. S. Dresselhaus

College of Engineering

SUNY Polytechnic Institute

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi _1-xSb _x thin films that are grown along different crystalline axes. The phase diagrams for the Bi _1-xSb _x thin film systems with different growth orientations are calculated and analyzed.

Original language	English
Article number	075436
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.86.075436
State	Published - Aug 15 2012

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title = "Phase diagrams of Bi 1-xSb x thin films with different growth orientations",

abstract = "A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi 1-xSb x thin films that are grown along different crystalline axes. The phase diagrams for the Bi 1-xSb x thin film systems with different growth orientations are calculated and analyzed.",

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N2 - A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi 1-xSb x thin films that are grown along different crystalline axes. The phase diagrams for the Bi 1-xSb x thin film systems with different growth orientations are calculated and analyzed.

AB - A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi 1-xSb x thin films that are grown along different crystalline axes. The phase diagrams for the Bi 1-xSb x thin film systems with different growth orientations are calculated and analyzed.

UR - https://www.scopus.com/pages/publications/84865100951

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DO - 10.1103/PhysRevB.86.075436

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Phase diagrams of Bi _1-xSb _x thin films with different growth orientations

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