Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures

M. Ya Vinnichenko; D. A. Firsov; L. E. Vorobjev; M. O. Mashko; L. Shterengas; G. Belenky

doi:10.1134/S1063782612120202

Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures

M. Ya Vinnichenko
, D. A. Firsov
, L. E. Vorobjev
, M. O. Mashko
, L. Shterengas
, G. Belenky

Electrical Engineering

Stony Brook University

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The time dependences of the photoluminescence intensity is studied for InGaAsSb/AlGaAsSb quantum wells with different barrier widths and different barrier-material compositions. From analysis of the photoluminescence dynamics, the times of charge-carrier trapping at quantum wells, the energy dissipation times, and the lifetimes, including the lifetime with respect to resonant Auger recombination, are determined. It is shown that, for a certain structure configuration, it is possible to observe the resonant Auger recombination of nonequilibrium charge carriers.

Original language	English
Pages (from-to)	146-151
Number of pages	6
Journal	Semiconductors
Volume	47
Issue number	1
DOIs	https://doi.org/10.1134/S1063782612120202
State	Published - 2013

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abstract = "The time dependences of the photoluminescence intensity is studied for InGaAsSb/AlGaAsSb quantum wells with different barrier widths and different barrier-material compositions. From analysis of the photoluminescence dynamics, the times of charge-carrier trapping at quantum wells, the energy dissipation times, and the lifetimes, including the lifetime with respect to resonant Auger recombination, are determined. It is shown that, for a certain structure configuration, it is possible to observe the resonant Auger recombination of nonequilibrium charge carriers.",

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language = "English",

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AU - Vinnichenko, M. Ya

AU - Firsov, D. A.

AU - Vorobjev, L. E.

AU - Mashko, M. O.

AU - Shterengas, L.

AU - Belenky, G.

PY - 2013

Y1 - 2013

N2 - The time dependences of the photoluminescence intensity is studied for InGaAsSb/AlGaAsSb quantum wells with different barrier widths and different barrier-material compositions. From analysis of the photoluminescence dynamics, the times of charge-carrier trapping at quantum wells, the energy dissipation times, and the lifetimes, including the lifetime with respect to resonant Auger recombination, are determined. It is shown that, for a certain structure configuration, it is possible to observe the resonant Auger recombination of nonequilibrium charge carriers.

AB - The time dependences of the photoluminescence intensity is studied for InGaAsSb/AlGaAsSb quantum wells with different barrier widths and different barrier-material compositions. From analysis of the photoluminescence dynamics, the times of charge-carrier trapping at quantum wells, the energy dissipation times, and the lifetimes, including the lifetime with respect to resonant Auger recombination, are determined. It is shown that, for a certain structure configuration, it is possible to observe the resonant Auger recombination of nonequilibrium charge carriers.

UR - https://www.scopus.com/pages/publications/84872019352

U2 - 10.1134/S1063782612120202

DO - 10.1134/S1063782612120202

M3 - Article

SN - 1063-7826

VL - 47

SP - 146

EP - 151

JO - Semiconductors

JF - Semiconductors

IS - 1

ER -

Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures

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