Photoluminescence from deep centers in GaAs

W. H. Koschel; S. G. Bishop; B. D. McCombe

doi:10.1016/0038-1098(76)90056-9

Photoluminescence from deep centers in GaAs

W. H. Koschel
, S. G. Bishop
, B. D. McCombe

Physics

University at Buffalo

Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Sharp line structure attributable to phonon assisted radiative emission has been observed in the 6 K photoluminescence spectra from deep centers in bulk samples of chromium doped GaAs. Two luminescence bands at 0.56 and 0.8 eV have been observed and both bands exhibit evidence of phonon assisted radiative recombination. An exploration of these luminescence bands in terms of excited state to ground state transitions of Cr³⁺ and Cr²⁺ ions is proposed.

Original language	English
Pages (from-to)	521-524
Number of pages	4
Journal	Solid State Communications
Volume	19
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(76)90056-9
State	Published - Jul 1976

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@article{c46cb19ea8cb44bda3b5c8a2c5f931ab,

title = "Photoluminescence from deep centers in GaAs",

abstract = "Sharp line structure attributable to phonon assisted radiative emission has been observed in the 6 K photoluminescence spectra from deep centers in bulk samples of chromium doped GaAs. Two luminescence bands at 0.56 and 0.8 eV have been observed and both bands exhibit evidence of phonon assisted radiative recombination. An exploration of these luminescence bands in terms of excited state to ground state transitions of Cr3+ and Cr2+ ions is proposed.",

author = "Koschel, \{W. H.\} and Bishop, \{S. G.\} and McCombe, \{B. D.\}",

year = "1976",

month = jul,

doi = "10.1016/0038-1098(76)90056-9",

language = "English",

volume = "19",

pages = "521--524",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "6",

}

TY - JOUR

T1 - Photoluminescence from deep centers in GaAs

AU - Koschel, W. H.

AU - Bishop, S. G.

AU - McCombe, B. D.

PY - 1976/7

Y1 - 1976/7

N2 - Sharp line structure attributable to phonon assisted radiative emission has been observed in the 6 K photoluminescence spectra from deep centers in bulk samples of chromium doped GaAs. Two luminescence bands at 0.56 and 0.8 eV have been observed and both bands exhibit evidence of phonon assisted radiative recombination. An exploration of these luminescence bands in terms of excited state to ground state transitions of Cr3+ and Cr2+ ions is proposed.

AB - Sharp line structure attributable to phonon assisted radiative emission has been observed in the 6 K photoluminescence spectra from deep centers in bulk samples of chromium doped GaAs. Two luminescence bands at 0.56 and 0.8 eV have been observed and both bands exhibit evidence of phonon assisted radiative recombination. An exploration of these luminescence bands in terms of excited state to ground state transitions of Cr3+ and Cr2+ ions is proposed.

UR - https://www.scopus.com/pages/publications/0010179176

U2 - 10.1016/0038-1098(76)90056-9

DO - 10.1016/0038-1098(76)90056-9

M3 - Article

SN - 0038-1098

VL - 19

SP - 521

EP - 524

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Photoluminescence from deep centers in GaAs

Abstract

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