Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

G. V. Astakhov; V. P. Kochereshko; D. G. Vasil'ev; V. P. Evtikhiev; V. E. Tokranov; I. V. Kudryashov; G. V. Mikhaǐlov

doi:10.1134/1.1187820

Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

G. V. Astakhov
, V. P. Kochereshko
, D. G. Vasil'ev
, V. P. Evtikhiev
, V. E. Tokranov
, I. V. Kudryashov
, G. V. Mikhaǐlov

University at Albany Research Foundation

University at Albany

Ioffe Physical-Technical Institute

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.

Original language	English
Pages (from-to)	988-990
Number of pages	3
Journal	Semiconductors
Volume	33
Issue number	9
DOIs	https://doi.org/10.1134/1.1187820
State	Published - Sep 1999

Access to Document

10.1134/1.1187820

Cite this

@article{8cb7e11071da4ef9ac2bbca505d5acee,

title = "Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates",

abstract = "The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.",

author = "Astakhov, \{G. V.\} and Kochereshko, \{V. P.\} and Vasil'ev, \{D. G.\} and Evtikhiev, \{V. P.\} and Tokranov, \{V. E.\} and Kudryashov, \{I. V.\} and Mikhaǐlov, \{G. V.\}",

year = "1999",

month = sep,

doi = "10.1134/1.1187820",

language = "English",

volume = "33",

pages = "988--990",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "9",

}

TY - JOUR

T1 - Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

AU - Astakhov, G. V.

AU - Kochereshko, V. P.

AU - Vasil'ev, D. G.

AU - Evtikhiev, V. P.

AU - Tokranov, V. E.

AU - Kudryashov, I. V.

AU - Mikhaǐlov, G. V.

PY - 1999/9

Y1 - 1999/9

N2 - The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.

AB - The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.

UR - https://www.scopus.com/pages/publications/0033196074

U2 - 10.1134/1.1187820

DO - 10.1134/1.1187820

M3 - Article

SN - 1063-7826

VL - 33

SP - 988

EP - 990

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this