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Photons, electrons, and acid yields in EUV photoresists: A progress report

  • Robert Brainard
  • , Elsayed Hassanein
  • , Juntao Li
  • , Piyush Pathak
  • , Brad Thiel
  • , Franco Cerrina
  • , Richard Moore
  • , Miguel Rodriguez
  • , Boris Yakshinskiy
  • , Elena Loginova
  • , Theodore Madey
  • , Richard Matyi
  • , Matt Malloy
  • , Andrew Rudack
  • , Patrick Naulleau
  • , Andrea Wüest
  • , Kim Dean

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

34 Scopus citations

Abstract

This paper describes our initial investigation into building a greater understanding of the complex mechanism occurring during extreme ultraviolet (EUV) exposure of resist materials. In particular, we are focusing on the number and energy of photoelectrons generated and available for reaction with photoacid generators (PAGs). We propose that this approach will best enable the industry to develop resists capable of meeting resolution, line width roughness (LWR), and sensitivity requirements.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXV
DOIs
StatePublished - 2008
EventAdvances in Resist Materials and Processing Technology XXV - San Jose, CA, United States
Duration: Feb 25 2008Feb 27 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6923

Conference

ConferenceAdvances in Resist Materials and Processing Technology XXV
Country/TerritoryUnited States
CitySan Jose, CA
Period02/25/0802/27/08

Keywords

  • EELS
  • EUV Resists
  • Mechanism
  • Monte carlo
  • PAGs
  • Photoacid generators
  • Photoelectrons
  • Quantum yield

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