@inproceedings{69d87f8f3c7c49baa2d61029db3f1eb1,
title = "Physical vapor transport crystal growth of ZnO",
abstract = "Physical vapor transport (PVT) growth of mm-size, polycrystalline ZnO has been demonstrated at temperatures exceeding 1600°C under air at atmospheric pressure. Scanning electron microscopy (SEM) analysis revealed the growth of grains and microcrystals with strong faceted morphologies suggesting near-equilibrium growth conditions. In addition, a temperature-dependent formula for the O2 sticking coefficient has been developed to predict the maximum growth rate of PVT ZnO. Combining this formula with an existing one-dimensional analytical model for PVT growth of bulk AlN, the value of the growth rate of PVT ZnO as a function of temperature and oxygen vapor partial pressure has been studied. This analysis predicts that growth rates in the order of 1mm/h could be theoretically achieved using the PVT method under non-stoichiometric oxygen-rich vapor pressures and temperatures exceeding 1600°C.",
keywords = "Bulk growth, Growth habit, Growth rate, High temperature, Physical vapor transport, Sticking coefficient, Sublimation, Zinc oxide",
author = "Rojo, \{J. Carlos\} and Shanshan Liang and Hui Chen and Michael Dudley",
year = "2006",
doi = "10.1117/12.656322",
language = "English",
isbn = "0819461644",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Zinc Oxide Materials and Devices",
note = "Zinc Oxide Materials and Devices ; Conference date: 22-01-2006 Through 25-01-2006",
}