Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

C. Jorel; C. Vallée; E. Gourvest; B. Pelissier; M. Kahn; M. Bonvalot; P. Gonon

doi:10.1116/1.3021036

Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

C. Jorel
, C. Vallée
, E. Gourvest
, B. Pelissier
, M. Kahn
, M. Bonvalot
, P. Gonon

Nanoscale Science and Engineering

University at Albany

Commissariat à l’énergie atomique et aux énergies alternatives

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

This work reports on the study of two HfO2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO2 films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode.

Original language	English
Pages (from-to)	378-383
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3021036
State	Published - 2009

Access to Document

10.1116/1.3021036

Cite this

Jorel, C., Vallée, C., Gourvest, E., Pelissier, B., Kahn, M., Bonvalot, M., & Gonon, P. (2009). Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 378-383. https://doi.org/10.1116/1.3021036

@article{57821be8e3be488ab9e325e660781d45,

title = "Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application",

abstract = "This work reports on the study of two HfO2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO2 films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode.",

author = "C. Jorel and C. Vall{\'e}e and E. Gourvest and B. Pelissier and M. Kahn and M. Bonvalot and P. Gonon",

year = "2009",

doi = "10.1116/1.3021036",

language = "English",

volume = "27",

pages = "378--383",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Jorel, C, Vallée, C, Gourvest, E, Pelissier, B, Kahn, M, Bonvalot, M & Gonon, P 2009, 'Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 378-383. https://doi.org/10.1116/1.3021036

Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application. / Jorel, C.; Vallée, C.; Gourvest, E. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 2009, p. 378-383.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

AU - Jorel, C.

AU - Vallée, C.

AU - Gourvest, E.

AU - Pelissier, B.

AU - Kahn, M.

AU - Bonvalot, M.

AU - Gonon, P.

PY - 2009

Y1 - 2009

N2 - This work reports on the study of two HfO2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO2 films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode.

AB - This work reports on the study of two HfO2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO2 films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode.

UR - https://www.scopus.com/pages/publications/59949090257

U2 - 10.1116/1.3021036

DO - 10.1116/1.3021036

M3 - Article

SN - 1071-1023

VL - 27

SP - 378

EP - 383

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

Abstract

Access to Document

Other files and links

Fingerprint

Cite this