Piezo Hall Effect in p‐Germanium

The piezo Hall effect is investigated on p‐Ge samples of low (ρ_{300 K} = 0.02 Ωcm) and high (ρ_{300 K} = 16 Ωcm) resistivity in the temperature range 77 to 300 K for the case of current i and uniaxial stress x being parallel to the 〈100〉 and 〈111〉 crystal axes. Taking into account the dispersion law anisotropy for light and heavy holes allows to explain the experimental temperature dependence of the piezoresistivity coefficients for samples of low and high resistivity and orientational dependence of this effect. The deformation potential constants b and d are obtained which vary in the range b = — (2.2 to 2.6) eV, d = — (4.4 to 5.1) eV depending on the values of the band parameters A, B, and C given in literature. These values of b, d are considerably different from those obtained by means of the same experimental data, but without taking into account the dispersion law anisotropy.