PIEZORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

A. I. Elizarov; V. V. Kolomoets; V. V. Mitin

PIEZORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

A. I. Elizarov
, V. V. Kolomoets
, V. V. Mitin

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Article › peer-review

Abstract

Results of measuring the longitudinal piezoresistance of p-type Ge in a wide range of mechanical loads at 77 are reported giving a semiquantitative explanation of the dependences obtained allowing for various scattering mechanisms in the range of weak and strong deformations.

Original language	English
Pages (from-to)	912-913
Number of pages	2
Journal	Semiconductors
Volume	9
Issue number	7
State	Published - 1975

Cite this

@article{c46eecfa1c1143e2821c44a8f49222bd,

title = "PIEZORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.",

abstract = "Results of measuring the longitudinal piezoresistance of p-type Ge in a wide range of mechanical loads at 77 are reported giving a semiquantitative explanation of the dependences obtained allowing for various scattering mechanisms in the range of weak and strong deformations.",

author = "Elizarov, \{A. I.\} and Kolomoets, \{V. V.\} and Mitin, \{V. V.\}",

year = "1975",

language = "English",

volume = "9",

pages = "912--913",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "7",

}

TY - JOUR

T1 - PIEZORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

AU - Elizarov, A. I.

AU - Kolomoets, V. V.

AU - Mitin, V. V.

PY - 1975

Y1 - 1975

N2 - Results of measuring the longitudinal piezoresistance of p-type Ge in a wide range of mechanical loads at 77 are reported giving a semiquantitative explanation of the dependences obtained allowing for various scattering mechanisms in the range of weak and strong deformations.

AB - Results of measuring the longitudinal piezoresistance of p-type Ge in a wide range of mechanical loads at 77 are reported giving a semiquantitative explanation of the dependences obtained allowing for various scattering mechanisms in the range of weak and strong deformations.

UR - https://www.scopus.com/pages/publications/0016530865

M3 - Article

SN - 1063-7826

VL - 9

SP - 912

EP - 913

JO - Semiconductors

JF - Semiconductors

IS - 7

ER -

PIEZORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

Abstract

Other files and links

Fingerprint

Cite this