Pressure-induced resonant Raman scattering in an InxGa1-xAs/GaAs strained-layer superlattice

V. Lemos; C. K. Inoko; F. Cerdeira; T. Ritter; B. A. Weinstein

doi:10.1016/0038-1098(92)90429-D

Pressure-induced resonant Raman scattering in an In_xGa_1-xAs/GaAs strained-layer superlattice

V. Lemos
, C. K. Inoko
, F. Cerdeira
, T. Ritter
, B. A. Weinstein

Physics

University at Buffalo

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We performed resonant Raman scattering experiments in an In_0.24Ga_0.76As/GaAs superlattice by tuning the energy gaps of the material to the scattered light energy with the application of hydrostatic pressure. The spectra show peaks that are best interpreted in terms of phonons which propogate through the entire superlattice with no evidence of confined or interface modes.

Original language	English
Pages (from-to)	1011-1013
Number of pages	3
Journal	Solid State Communications
Volume	84
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(92)90429-D
State	Published - Dec 1992

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@article{4229924db725408abb4b31ba73a4e8ac,

title = "Pressure-induced resonant Raman scattering in an InxGa1-xAs/GaAs strained-layer superlattice",

abstract = "We performed resonant Raman scattering experiments in an In0.24Ga0.76As/GaAs superlattice by tuning the energy gaps of the material to the scattered light energy with the application of hydrostatic pressure. The spectra show peaks that are best interpreted in terms of phonons which propogate through the entire superlattice with no evidence of confined or interface modes.",

author = "V. Lemos and Inoko, \{C. K.\} and F. Cerdeira and T. Ritter and Weinstein, \{B. A.\}",

year = "1992",

month = dec,

doi = "10.1016/0038-1098(92)90429-D",

language = "English",

volume = "84",

pages = "1011--1013",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "11",

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TY - JOUR

T1 - Pressure-induced resonant Raman scattering in an InxGa1-xAs/GaAs strained-layer superlattice

AU - Lemos, V.

AU - Inoko, C. K.

AU - Cerdeira, F.

AU - Ritter, T.

AU - Weinstein, B. A.

PY - 1992/12

Y1 - 1992/12

N2 - We performed resonant Raman scattering experiments in an In0.24Ga0.76As/GaAs superlattice by tuning the energy gaps of the material to the scattered light energy with the application of hydrostatic pressure. The spectra show peaks that are best interpreted in terms of phonons which propogate through the entire superlattice with no evidence of confined or interface modes.

AB - We performed resonant Raman scattering experiments in an In0.24Ga0.76As/GaAs superlattice by tuning the energy gaps of the material to the scattered light energy with the application of hydrostatic pressure. The spectra show peaks that are best interpreted in terms of phonons which propogate through the entire superlattice with no evidence of confined or interface modes.

UR - https://www.scopus.com/pages/publications/0026998881

U2 - 10.1016/0038-1098(92)90429-D

DO - 10.1016/0038-1098(92)90429-D

M3 - Article

SN - 0038-1098

VL - 84

SP - 1011

EP - 1013

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Pressure-induced resonant Raman scattering in an In_xGa_1-xAs/GaAs strained-layer superlattice

Abstract

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