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Pressure-Induced Superconductivity in the Wide-Band-Gap Semiconductor Cu2Br2Se6with a Robust Framework

  • Weizhao Cai
  • , Wenwen Lin
  • , Yan Yan
  • , Katerina P. Hilleke
  • , Jared Coles
  • , Jin Ke Bao
  • , Jingui Xu
  • , Dongzhou Zhang
  • , Duck Young Chung
  • , Mercouri G. Kanatzidis
  • , Eva Zurek
  • , Shanti Deemyad
  • University of Utah
  • Argonne National Laboratory
  • SUNY Buffalo
  • University of Hawai'i at Mānoa
  • Northwestern University

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report pressure-induced superconductivity in a ternary and nonmagnetic Cu-containing semiconductor, Cu2Br2Se6, with a wide band gap of 1.89 eV, in which the Cu and Br atoms generate infinite 21 helical chains along the c-axis and are linked by the cyclohexane-like Se6 rings to form a three-dimensional framework. We find that this framework is remarkably robust under compression, and the ambient-pressure phase survives at least to our experimental limit of 32.1 GPa. Concurrent semiconductor-to-metal transition and superconductivity are observed above 21.0 GPa. The superconducting temperature monotonically increases from 4.0 to 6.7 K at 40.0 GPa. First-principles calculations show that the emergence of superconductivity is associated with the formation of weak multicentered bonds that involve the increase in coordination of the Cu atoms and a subset of the Se atoms. The observation of superconductivity in this type of nonmagnetic transition-metal-based material will inspire the exploration of related new superconductors under pressure.

Original languageEnglish
Pages (from-to)6237-6246
Number of pages10
JournalChemistry of Materials
Volume32
Issue number14
DOIs
StatePublished - Jul 28 2020

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