Processing of graphene on 300mm Si wafers in a state-of-the-art CMOS fabrication facility

The article demonstrates the introduction of single-layer graphene into a highly- advanced CMOS fab. Graphene was grown by low-pressure CVD in a typical tube furnace on commercially available Cu foil. Prior to graphene transfer, a thermal-release tape was placed on the Cu foil to serve as a support for further proessing. The Cu foil was then etched using a mixture of hydrochloric acid, hydrogen peroxide and de-ionized water. Due to the use of Cu foil and laboratory instruments, the grapheme growth, etch and transfer processes have the potential to leave residual metal contamination on the wafer. The detection of metallic ions on the transferred grapheme was performed by Total-reflection X-Ray Fluorescence (TXR).