Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph; James Dunn; Greg Freeman; David L. Harame; Dough Coolbaugh; Rob Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; P. Cooper; Jeffrey B. Johnson; Jae Sung Rieh; Basanth Jagannathan; Vidhya Ramachandran; David Ahlgren; Dawn Wang; X. Wang

doi:10.1109/JSSC.2003.815930

Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph
, James Dunn
, Greg Freeman
, David L. Harame
, Dough Coolbaugh
, Rob Groves
, Kenneth J. Stein
, Rich Volant
, Seshadri Subbanna
, V. S. Marangos
, Stephen St. Onge
, Ebenezer Eshun
, P. Cooper
, Jeffrey B. Johnson
, Jae Sung Rieh
, Basanth Jagannathan
, Vidhya Ramachandran
, David Ahlgren
, Dawn Wang
, X. Wang

NY Creates Research Foundation

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Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

Original language	English
Pages (from-to)	1471-1478
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2003.815930
State	Published - Sep 2003

Keywords

BiCMOS
Multiplexer (MUX)
Power amplifier
SiGe HBT
Voltage-controlled oscillator (VCO)

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10.1109/JSSC.2003.815930

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Joseph, A. J., Dunn, J., Freeman, G., Harame, D. L., Coolbaugh, D., Groves, R., Stein, K. J., Volant, R., Subbanna, S., Marangos, V. S., St. Onge, S., Eshun, E., Cooper, P., Johnson, J. B., Rieh, J. S., Jagannathan, B., Ramachandran, V., Ahlgren, D., Wang, D., & Wang, X. (2003). Product Applications and Technology Directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 38(9), 1471-1478. https://doi.org/10.1109/JSSC.2003.815930

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title = "Product Applications and Technology Directions with SiGe BiCMOS",

abstract = "In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.",

keywords = "BiCMOS, Multiplexer (MUX), Power amplifier, SiGe HBT, Voltage-controlled oscillator (VCO)",

author = "Joseph, \{Alvin J.\} and James Dunn and Greg Freeman and Harame, \{David L.\} and Dough Coolbaugh and Rob Groves and Stein, \{Kenneth J.\} and Rich Volant and Seshadri Subbanna and Marangos, \{V. S.\} and \{St. Onge\}, Stephen and Ebenezer Eshun and P. Cooper and Johnson, \{Jeffrey B.\} and Rieh, \{Jae Sung\} and Basanth Jagannathan and Vidhya Ramachandran and David Ahlgren and Dawn Wang and X. Wang",

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Joseph, AJ, Dunn, J, Freeman, G, Harame, DL, Coolbaugh, D, Groves, R, Stein, KJ, Volant, R, Subbanna, S, Marangos, VS, St. Onge, S, Eshun, E, Cooper, P, Johnson, JB, Rieh, JS, Jagannathan, B, Ramachandran, V, Ahlgren, D, Wang, D & Wang, X 2003, 'Product Applications and Technology Directions with SiGe BiCMOS', IEEE Journal of Solid-State Circuits, vol. 38, no. 9, pp. 1471-1478. https://doi.org/10.1109/JSSC.2003.815930

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T1 - Product Applications and Technology Directions with SiGe BiCMOS

AU - Joseph, Alvin J.

AU - Dunn, James

AU - Freeman, Greg

AU - Harame, David L.

AU - Coolbaugh, Dough

AU - Groves, Rob

AU - Stein, Kenneth J.

AU - Volant, Rich

AU - Subbanna, Seshadri

AU - Marangos, V. S.

AU - St. Onge, Stephen

AU - Eshun, Ebenezer

AU - Cooper, P.

AU - Johnson, Jeffrey B.

AU - Rieh, Jae Sung

AU - Jagannathan, Basanth

AU - Ramachandran, Vidhya

AU - Ahlgren, David

AU - Wang, Dawn

AU - Wang, X.

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AB - In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

KW - BiCMOS

KW - Multiplexer (MUX)

KW - Power amplifier

KW - SiGe HBT

KW - Voltage-controlled oscillator (VCO)

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

Product Applications and Technology Directions with SiGe BiCMOS

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Keywords

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