@inproceedings{adebc163998e4adfa74dd143b80e8485,
title = "Progress in type-I In(Al)GaAsSb/GaSb diode lasers with λ > 2.5µm",
abstract = "Type-I InGaAsSb QW λ = 2.8µm diode lasers were developed. They output 40mW CW at 200C and more than 1W peak power. Room temperature photoluminescence with λpeak > 3µm was measured from similar laser structures.",
author = "L. Shterengas and Kim, \{J. G.\} and G. Belenky and R. Martinelli",
note = "Publisher Copyright: {\textcopyright} 2003 OSA/CLEO 2003.; Conference on Lasers and Electro-Optics, CLEO 2003 ; Conference date: 01-06-2003 Through 06-06-2003",
year = "2003",
language = "English",
series = "Optics InfoBase Conference Papers",
publisher = "Optica Publishing Group (formerly OSA)",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2003",
}