Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy

Rosalyn Koscica; Alec Skipper; Bei Shi; Kaiyin Feng; Gerald Leake; Michael Zylstra; Joshua Herman; Andrew Netherton; Aparna Prabakaran; Chen Shang; Jonathan Klamkin; David Harame; John E. Bowers

doi:10.1109/JLT.2025.3555555

Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy

Rosalyn Koscica
, Alec Skipper
, Bei Shi
, Kaiyin Feng
, Gerald Leake
, Michael Zylstra
, Joshua Herman
, Andrew Netherton
, Aparna Prabakaran
, Chen Shang
, Jonathan Klamkin
, David Harame
, John E. Bowers

NY Creates Research Foundation

NY Creates

University of California at Santa Barbara
Aeluma Inc.
Analog Photonics LLC
SUNY Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Monolithically integrated lasers on silicon photonics enable scalable, foundry-compatible production for data communications applications. However, material mismatches in heteroepitaxial systems and high coupling losses pose challenges for III-V integration on silicon. We combine three techniques: recessed silicon pockets for III-V growth, two-step heteroepitaxy using both MOCVD and MBE, and a polymer facet gap-fill approach to develop O-band InAs quantum dot lasers monolithically integrated on silicon photonics chiplets. Lasers coupled to silicon ring resonators and silicon nitride distributed Bragg reflectors (DBR) demonstrate single-mode lasing with side-mode suppression ratio up to 32 dB. Devices lase at temperatures up to 105 °C with an extrapolated operational lifetime of 6.2 years at 35 °C.

Original language	English
Pages (from-to)	5773-5781
Number of pages	9
Journal	Journal of Lightwave Technology
Volume	43
Issue number	12
DOIs	https://doi.org/10.1109/JLT.2025.3555555
State	Published - 2025

Keywords

Active-passive coupling
DBR laser
III-V on Si integration
O-band
monolithic integration
optical coupling
quantum dot laser
semiconductor laser
silicon photonics

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10.1109/JLT.2025.3555555

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@article{93f934314e024977bba151acbd77ad29,

title = "Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy",

abstract = "Monolithically integrated lasers on silicon photonics enable scalable, foundry-compatible production for data communications applications. However, material mismatches in heteroepitaxial systems and high coupling losses pose challenges for III-V integration on silicon. We combine three techniques: recessed silicon pockets for III-V growth, two-step heteroepitaxy using both MOCVD and MBE, and a polymer facet gap-fill approach to develop O-band InAs quantum dot lasers monolithically integrated on silicon photonics chiplets. Lasers coupled to silicon ring resonators and silicon nitride distributed Bragg reflectors (DBR) demonstrate single-mode lasing with side-mode suppression ratio up to 32 dB. Devices lase at temperatures up to 105 °C with an extrapolated operational lifetime of 6.2 years at 35 °C.",

keywords = "Active-passive coupling, DBR laser, III-V on Si integration, O-band, monolithic integration, optical coupling, quantum dot laser, semiconductor laser, silicon photonics",

author = "Rosalyn Koscica and Alec Skipper and Bei Shi and Kaiyin Feng and Gerald Leake and Michael Zylstra and Joshua Herman and Andrew Netherton and Aparna Prabakaran and Chen Shang and Jonathan Klamkin and David Harame and Bowers, \{John E.\}",

note = "Publisher Copyright: {\textcopyright} 1983-2012 IEEE.",

year = "2025",

doi = "10.1109/JLT.2025.3555555",

language = "English",

volume = "43",

pages = "5773--5781",

journal = "Journal of Lightwave Technology",

issn = "0733-8724",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy

AU - Koscica, Rosalyn

AU - Skipper, Alec

AU - Shi, Bei

AU - Feng, Kaiyin

AU - Leake, Gerald

AU - Zylstra, Michael

AU - Herman, Joshua

AU - Netherton, Andrew

AU - Prabakaran, Aparna

AU - Shang, Chen

AU - Klamkin, Jonathan

AU - Harame, David

AU - Bowers, John E.

PY - 2025

Y1 - 2025

N2 - Monolithically integrated lasers on silicon photonics enable scalable, foundry-compatible production for data communications applications. However, material mismatches in heteroepitaxial systems and high coupling losses pose challenges for III-V integration on silicon. We combine three techniques: recessed silicon pockets for III-V growth, two-step heteroepitaxy using both MOCVD and MBE, and a polymer facet gap-fill approach to develop O-band InAs quantum dot lasers monolithically integrated on silicon photonics chiplets. Lasers coupled to silicon ring resonators and silicon nitride distributed Bragg reflectors (DBR) demonstrate single-mode lasing with side-mode suppression ratio up to 32 dB. Devices lase at temperatures up to 105 °C with an extrapolated operational lifetime of 6.2 years at 35 °C.

AB - Monolithically integrated lasers on silicon photonics enable scalable, foundry-compatible production for data communications applications. However, material mismatches in heteroepitaxial systems and high coupling losses pose challenges for III-V integration on silicon. We combine three techniques: recessed silicon pockets for III-V growth, two-step heteroepitaxy using both MOCVD and MBE, and a polymer facet gap-fill approach to develop O-band InAs quantum dot lasers monolithically integrated on silicon photonics chiplets. Lasers coupled to silicon ring resonators and silicon nitride distributed Bragg reflectors (DBR) demonstrate single-mode lasing with side-mode suppression ratio up to 32 dB. Devices lase at temperatures up to 105 °C with an extrapolated operational lifetime of 6.2 years at 35 °C.

KW - Active-passive coupling

KW - DBR laser

KW - III-V on Si integration

KW - O-band

KW - monolithic integration

KW - optical coupling

KW - quantum dot laser

KW - semiconductor laser

KW - silicon photonics

UR - https://www.scopus.com/pages/publications/105001523097

U2 - 10.1109/JLT.2025.3555555

DO - 10.1109/JLT.2025.3555555

M3 - Article

SN - 0733-8724

VL - 43

SP - 5773

EP - 5781

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 12

ER -

Quantum Dot DBR Lasers Monolithically Integrated on Silicon Photonics by In-Pocket Heteroepitaxy

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Keywords

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