Quantum transport in graphene p-n junctions with moiré superlattice modulation

Jiuning Hu; Albert F. Rigosi; Ji U. Lee; Hsin Yen Lee; Yanfei Yang; Chieh I. Liu; Randolph E. Elmquist; David B. Newell

doi:10.1103/PhysRevB.98.045412

Quantum transport in graphene p-n junctions with moiré superlattice modulation

Jiuning Hu
, Albert F. Rigosi
, Ji U. Lee
, Hsin Yen Lee
, Yanfei Yang
, Chieh I. Liu
, Randolph E. Elmquist
, David B. Newell

Nanoscale Science and Engineering

University at Albany

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We present simulations of quantum transport in graphene p-n junctions (pnJs) in which moiré superlattice potentials are incorporated to demonstrate the interplay between pnJs and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pnJ profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal-boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.

Original language	English
Article number	045412
Journal	Physical Review B
Volume	98
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.98.045412
State	Published - Jul 12 2018

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10.1103/PhysRevB.98.045412

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title = "Quantum transport in graphene p-n junctions with moir{\'e} superlattice modulation",

abstract = "We present simulations of quantum transport in graphene p-n junctions (pnJs) in which moir{\'e} superlattice potentials are incorporated to demonstrate the interplay between pnJs and moir{\'e} superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pnJ profile, junction height, and moir{\'e} potentials. Device resistance measurements are subsequently performed on graphene/hexagonal-boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.",

author = "Jiuning Hu and Rigosi, \{Albert F.\} and Lee, \{Ji U.\} and Lee, \{Hsin Yen\} and Yanfei Yang and Liu, \{Chieh I.\} and Elmquist, \{Randolph E.\} and Newell, \{David B.\}",

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doi = "10.1103/PhysRevB.98.045412",

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AU - Hu, Jiuning

AU - Rigosi, Albert F.

AU - Lee, Ji U.

AU - Lee, Hsin Yen

AU - Yang, Yanfei

AU - Liu, Chieh I.

AU - Elmquist, Randolph E.

AU - Newell, David B.

PY - 2018/7/12

Y1 - 2018/7/12

N2 - We present simulations of quantum transport in graphene p-n junctions (pnJs) in which moiré superlattice potentials are incorporated to demonstrate the interplay between pnJs and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pnJ profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal-boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.

AB - We present simulations of quantum transport in graphene p-n junctions (pnJs) in which moiré superlattice potentials are incorporated to demonstrate the interplay between pnJs and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pnJ profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal-boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.

UR - https://www.scopus.com/pages/publications/85050494594

U2 - 10.1103/PhysRevB.98.045412

DO - 10.1103/PhysRevB.98.045412

M3 - Article

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VL - 98

JO - Physical Review B

JF - Physical Review B

IS - 4

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ER -

Quantum transport in graphene p-n junctions with moiré superlattice modulation

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