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Raman scattering in GaSb-AlSb strained layer superlattices

  • B. Jusserand
  • , P. Voisin
  • , M. Voos
  • , L. L. Chang
  • , E. E. Mendez
  • , L. Esaki
  • Orange Labs
  • Université Psl
  • IBM

Research output: Contribution to journalArticlepeer-review

101 Scopus citations

Abstract

We observe that the energy of the GaSb longitudinal optical phonons in GaSb-AlSb superlattices is about 2 cm-1 lower than in bulk GaSb. We show that this effect is fully explained by the consideration of the misfit strains which are known to exist in these superlattices. This shift of the Raman frequency allows a direct optical determination of the strains in heterostructures.

Original languageEnglish
Pages (from-to)678-680
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number7
DOIs
StatePublished - 1985

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