Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m

I. C. Sandall; C. L. Walker; P. M. Smowton; I. R. Sellers; D. J. Mowbray; H. Y. Liu; M. Hopkinson

doi:10.1109/EQEC.2005.1567193

Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m

I. C. Sandall
, C. L. Walker
, P. M. Smowton
, I. R. Sellers
, D. J. Mowbray
, H. Y. Liu
, M. Hopkinson

Department of Electrical Engineering

University at Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2005 European Quantum Electronics Conference, EQEC '05
Pages	20
Number of pages	1
DOIs	https://doi.org/10.1109/EQEC.2005.1567193
State	Published - 2005
Event	2005 European Quantum Electronics Conference, EQEC '05 - Munich, Germany Duration: Jun 12 2005 → Jun 17 2005

Publication series

Name	2005 European Quantum Electronics Conference, EQEC '05
Volume	2005

Conference

Conference	2005 European Quantum Electronics Conference, EQEC '05
Country/Territory	Germany
City	Munich
Period	06/12/05 → 06/17/05

Access to Document

10.1109/EQEC.2005.1567193

Cite this

Sandall, I. C., Walker, C. L., Smowton, P. M., Sellers, I. R., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2005). Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m. In 2005 European Quantum Electronics Conference, EQEC '05 (pp. 20). Article 1567193 (2005 European Quantum Electronics Conference, EQEC '05; Vol. 2005). https://doi.org/10.1109/EQEC.2005.1567193

@inproceedings{48d3310064df49449196ac663a17b95c,

title = "Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m",

author = "Sandall, \{I. C.\} and Walker, \{C. L.\} and Smowton, \{P. M.\} and Sellers, \{I. R.\} and Mowbray, \{D. J.\} and Liu, \{H. Y.\} and M. Hopkinson",

year = "2005",

doi = "10.1109/EQEC.2005.1567193",

language = "English",

isbn = "0780389735",

series = "2005 European Quantum Electronics Conference, EQEC '05",

pages = "20",

booktitle = "2005 European Quantum Electronics Conference, EQEC '05",

note = "2005 European Quantum Electronics Conference, EQEC '05 ; Conference date: 12-06-2005 Through 17-06-2005",

}

Sandall, IC, Walker, CL, Smowton, PM, Sellers, IR, Mowbray, DJ, Liu, HY & Hopkinson, M 2005, Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m. in 2005 European Quantum Electronics Conference, EQEC '05., 1567193, 2005 European Quantum Electronics Conference, EQEC '05, vol. 2005, pp. 20, 2005 European Quantum Electronics Conference, EQEC '05, Munich, Germany, 06/12/05. https://doi.org/10.1109/EQEC.2005.1567193

Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m. / Sandall, I. C.; Walker, C. L.; Smowton, P. M. et al.
2005 European Quantum Electronics Conference, EQEC '05. 2005. p. 20 1567193 (2005 European Quantum Electronics Conference, EQEC '05; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m

AU - Sandall, I. C.

AU - Walker, C. L.

AU - Smowton, P. M.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Liu, H. Y.

AU - Hopkinson, M.

PY - 2005

Y1 - 2005

UR - https://www.scopus.com/pages/publications/33847301583

U2 - 10.1109/EQEC.2005.1567193

DO - 10.1109/EQEC.2005.1567193

M3 - Conference contribution

SN - 0780389735

SN - 9780780389731

T3 - 2005 European Quantum Electronics Conference, EQEC '05

SP - 20

BT - 2005 European Quantum Electronics Conference, EQEC '05

T2 - 2005 European Quantum Electronics Conference, EQEC '05

Y2 - 12 June 2005 through 17 June 2005

ER -

Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m

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