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Resource allocation methodology for through silicon vias and sleep transistors in 3D ICs

  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A methodology and analytic expressions are proposed to appropriately allocate the available physical area to through silicon vias (TSVs) and sleep transistors in three-dimensional (3D) ICs with power gating. Power supply noise is minimized by the proposed resource allocation methodology while satisfying the required constraints on leakage current and turn-on time. A comprehensive simulation setup of a three plane 3D IC is developed to evaluate the accuracy and efficacy of the proposed methodology. The proposed expressions exhibit an error of 4% as compared to simulation results. The simulation results also demonstrate that the power supply noise is reduced by more than 46% while satisfying both turn-on time and leakage current.

Original languageEnglish
Title of host publicationProceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015
PublisherIEEE Computer Society
Pages528-532
Number of pages5
ISBN (Electronic)9781479975815
DOIs
StatePublished - Apr 13 2015
Event16th International Symposium on Quality Electronic Design, ISQED 2015 - Santa Clara, United States
Duration: Mar 2 2015Mar 4 2015

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2015-April

Conference

Conference16th International Symposium on Quality Electronic Design, ISQED 2015
Country/TerritoryUnited States
CitySanta Clara
Period03/2/1503/4/15

Keywords

  • 3D IC
  • Power gating
  • TSV
  • sleep transistor

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