RF performance of 28nm PolySiON and HKMG CMOS devices

Kok Wai Johnny Chew; Aniket Agshikar; Maciej Wiatr; Jen Shuang Wong; Wai Heng Chow; Zhihong Liu; Ting Huang Lee; Jinglin Shi; Suh Fei Lim; Kumaran Sundaram; Lye Hock Kelvin Chan; Chye Huat Michael Cheng; Nicolas Sassiat; Yong Koo Yoo; Asha Balijepalli; Amit Kumta; Chi Dong Nguyen; Ralf Illgen; Arun Mathew; Christian Schippel; Alexandru Romanescu; Josef Watts; David Harame

doi:10.1109/RFIC.2015.7337700

RF performance of 28nm PolySiON and HKMG CMOS devices

Kok Wai Johnny Chew
, Aniket Agshikar
, Maciej Wiatr
, Jen Shuang Wong
, Wai Heng Chow
, Zhihong Liu
, Ting Huang Lee
, Jinglin Shi
, Suh Fei Lim
, Kumaran Sundaram
, Lye Hock Kelvin Chan
, Chye Huat Michael Cheng
, Nicolas Sassiat
, Yong Koo Yoo
, Asha Balijepalli
, Amit Kumta
, Chi Dong Nguyen
, Ralf Illgen
, Arun Mathew
, Christian Schippel

Alexandru Romanescu, Josef Watts, David Harame

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor f_T and increases varactor tunning range. However, it can actually decrease f_max. We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher f_T. However, f_max is sensitive to gate resistance and PolySiON has an advantage here.

Original language	English
Title of host publication	Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
Editors	Domine Leenaerts
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-46
Number of pages	4
ISBN (Electronic)	9781479976416
DOIs	https://doi.org/10.1109/RFIC.2015.7337700
State	Published - Nov 25 2015
Event	IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 - Phoenix, United States Duration: May 17 2015 → May 19 2015

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume	2015-November

Conference

Conference	IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
Country/Territory	United States
City	Phoenix
Period	05/17/15 → 05/19/15

Keywords

28nm
CMOS High-K metal gate
PolySiON
RF

Access to Document

10.1109/RFIC.2015.7337700

Cite this

Chew, K. W. J., Agshikar, A., Wiatr, M., Wong, J. S., Chow, W. H., Liu, Z., Lee, T. H., Shi, J., Lim, S. F., Sundaram, K., Chan, L. H. K., Cheng, C. H. M., Sassiat, N., Yoo, Y. K., Balijepalli, A., Kumta, A., Nguyen, C. D., Illgen, R., Mathew, A., ... Harame, D. (2015). RF performance of 28nm PolySiON and HKMG CMOS devices. In D. Leenaerts (Ed.), Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 (pp. 43-46). Article 7337700 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2015-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2015.7337700

Chew, Kok Wai Johnny ; Agshikar, Aniket ; Wiatr, Maciej et al. / RF performance of 28nm PolySiON and HKMG CMOS devices. Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015. editor / Domine Leenaerts. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 43-46 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

@inproceedings{29cd33870aa24ac69ce8df74cb76ccda,

title = "RF performance of 28nm PolySiON and HKMG CMOS devices",

abstract = "The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor fT and increases varactor tunning range. However, it can actually decrease fmax. We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher fT. However, fmax is sensitive to gate resistance and PolySiON has an advantage here.",

keywords = "28nm, CMOS High-K metal gate, PolySiON, RF",

author = "Chew, \{Kok Wai Johnny\} and Aniket Agshikar and Maciej Wiatr and Wong, \{Jen Shuang\} and Chow, \{Wai Heng\} and Zhihong Liu and Lee, \{Ting Huang\} and Jinglin Shi and Lim, \{Suh Fei\} and Kumaran Sundaram and Chan, \{Lye Hock Kelvin\} and Cheng, \{Chye Huat Michael\} and Nicolas Sassiat and Yoo, \{Yong Koo\} and Asha Balijepalli and Amit Kumta and Nguyen, \{Chi Dong\} and Ralf Illgen and Arun Mathew and Christian Schippel and Alexandru Romanescu and Josef Watts and David Harame",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 ; Conference date: 17-05-2015 Through 19-05-2015",

year = "2015",

month = nov,

day = "25",

doi = "10.1109/RFIC.2015.7337700",

language = "English",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "43--46",

editor = "Domine Leenaerts",

booktitle = "Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015",

}

Chew, KWJ, Agshikar, A, Wiatr, M, Wong, JS, Chow, WH, Liu, Z, Lee, TH, Shi, J, Lim, SF, Sundaram, K, Chan, LHK, Cheng, CHM, Sassiat, N, Yoo, YK, Balijepalli, A, Kumta, A, Nguyen, CD, Illgen, R, Mathew, A, Schippel, C, Romanescu, A, Watts, J & Harame, D 2015, RF performance of 28nm PolySiON and HKMG CMOS devices. in D Leenaerts (ed.), Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015., 7337700, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, vol. 2015-November, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015, Phoenix, United States, 05/17/15. https://doi.org/10.1109/RFIC.2015.7337700

RF performance of 28nm PolySiON and HKMG CMOS devices. / Chew, Kok Wai Johnny; Agshikar, Aniket; Wiatr, Maciej et al.
Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015. ed. / Domine Leenaerts. Institute of Electrical and Electronics Engineers Inc., 2015. p. 43-46 7337700 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2015-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RF performance of 28nm PolySiON and HKMG CMOS devices

AU - Chew, Kok Wai Johnny

AU - Agshikar, Aniket

AU - Wiatr, Maciej

AU - Wong, Jen Shuang

AU - Chow, Wai Heng

AU - Liu, Zhihong

AU - Lee, Ting Huang

AU - Shi, Jinglin

AU - Lim, Suh Fei

AU - Sundaram, Kumaran

AU - Chan, Lye Hock Kelvin

AU - Cheng, Chye Huat Michael

AU - Sassiat, Nicolas

AU - Yoo, Yong Koo

AU - Balijepalli, Asha

AU - Kumta, Amit

AU - Nguyen, Chi Dong

AU - Illgen, Ralf

AU - Mathew, Arun

AU - Schippel, Christian

AU - Romanescu, Alexandru

AU - Watts, Josef

AU - Harame, David

PY - 2015/11/25

Y1 - 2015/11/25

N2 - The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor fT and increases varactor tunning range. However, it can actually decrease fmax. We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher fT. However, fmax is sensitive to gate resistance and PolySiON has an advantage here.

AB - The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor fT and increases varactor tunning range. However, it can actually decrease fmax. We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher fT. However, fmax is sensitive to gate resistance and PolySiON has an advantage here.

KW - 28nm

KW - CMOS High-K metal gate

KW - PolySiON

KW - RF

UR - https://www.scopus.com/pages/publications/84975748657

U2 - 10.1109/RFIC.2015.7337700

DO - 10.1109/RFIC.2015.7337700

M3 - Conference contribution

T3 - Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

SP - 43

EP - 46

BT - Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015

A2 - Leenaerts, Domine

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015

Y2 - 17 May 2015 through 19 May 2015

ER -

Chew KWJ, Agshikar A, Wiatr M, Wong JS, Chow WH, Liu Z et al. RF performance of 28nm PolySiON and HKMG CMOS devices. In Leenaerts D, editor, Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 43-46. 7337700. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). doi: 10.1109/RFIC.2015.7337700

RF performance of 28nm PolySiON and HKMG CMOS devices

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this