RF transmission line method for wide-bandgap heterostructures

A. Koudymov; N. Pala; V. Tokranov; S. Oktyabrsky; M. Gaevski; R. Jain; Jinwei Yang; X. Hu; M. Shur; R. Gaska; G. Simin

doi:10.1109/LED.2009.2016358

RF transmission line method for wide-bandgap heterostructures

A. Koudymov
, N. Pala
, V. Tokranov
, S. Oktyabrsky
, M. Gaevski
, R. Jain
, Jinwei Yang
, X. Hu
, M. Shur
, R. Gaska
, G. Simin

University at Albany

Rensselaer Polytechnic Institute
Florida International University
Princeton University
Sensor Electronic Technology, Inc.
University of South Carolina

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We propose a high-frequency extension of the transmission line model method that allows for independent extraction of open-surface sheet resistance of a semiconductor layer and that under metallization. The method is applied for the characterization of an AlGaN/GaN heterostructure with a high (∼40%) Al content with and without a top dielectric layer. In both cases, the sheet resistance under the metal is approximately 30% smaller than that under the open surface. This reduction is attributed to the surface charge compensation by the top metal.

Original language	English
Pages (from-to)	433-435
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2016358
State	Published - 2009

Keywords

AlGaN/GaN
Contact resistance
Heterostructure
High Al
Sheet resistance
Transmission line model (TLM)

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10.1109/LED.2009.2016358

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title = "RF transmission line method for wide-bandgap heterostructures",

abstract = "We propose a high-frequency extension of the transmission line model method that allows for independent extraction of open-surface sheet resistance of a semiconductor layer and that under metallization. The method is applied for the characterization of an AlGaN/GaN heterostructure with a high (∼40\%) Al content with and without a top dielectric layer. In both cases, the sheet resistance under the metal is approximately 30\% smaller than that under the open surface. This reduction is attributed to the surface charge compensation by the top metal.",

keywords = "AlGaN/GaN, Contact resistance, Heterostructure, High Al, Sheet resistance, Transmission line model (TLM)",

author = "A. Koudymov and N. Pala and V. Tokranov and S. Oktyabrsky and M. Gaevski and R. Jain and Jinwei Yang and X. Hu and M. Shur and R. Gaska and G. Simin",

year = "2009",

doi = "10.1109/LED.2009.2016358",

language = "English",

volume = "30",

pages = "433--435",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - RF transmission line method for wide-bandgap heterostructures

AU - Koudymov, A.

AU - Pala, N.

AU - Tokranov, V.

AU - Oktyabrsky, S.

AU - Gaevski, M.

AU - Jain, R.

AU - Yang, Jinwei

AU - Hu, X.

AU - Shur, M.

AU - Gaska, R.

AU - Simin, G.

PY - 2009

Y1 - 2009

N2 - We propose a high-frequency extension of the transmission line model method that allows for independent extraction of open-surface sheet resistance of a semiconductor layer and that under metallization. The method is applied for the characterization of an AlGaN/GaN heterostructure with a high (∼40%) Al content with and without a top dielectric layer. In both cases, the sheet resistance under the metal is approximately 30% smaller than that under the open surface. This reduction is attributed to the surface charge compensation by the top metal.

AB - We propose a high-frequency extension of the transmission line model method that allows for independent extraction of open-surface sheet resistance of a semiconductor layer and that under metallization. The method is applied for the characterization of an AlGaN/GaN heterostructure with a high (∼40%) Al content with and without a top dielectric layer. In both cases, the sheet resistance under the metal is approximately 30% smaller than that under the open surface. This reduction is attributed to the surface charge compensation by the top metal.

KW - AlGaN/GaN

KW - Contact resistance

KW - Heterostructure

KW - High Al

KW - Sheet resistance

KW - Transmission line model (TLM)

UR - https://www.scopus.com/pages/publications/67349128304

U2 - 10.1109/LED.2009.2016358

DO - 10.1109/LED.2009.2016358

M3 - Article

SN - 0741-3106

VL - 30

SP - 433

EP - 435

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

RF transmission line method for wide-bandgap heterostructures

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Keywords

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