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RLS tradeoff vs. quantum yield of high PAG EUV resists

  • SUNY Albany
  • SEMATECH

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

32 Scopus citations

Abstract

The effect of higher film quantum yields (FQYs) on the resolution, line-edge roughness, and sensitivity (RLS) tradeoff was evaluated for extreme ultraviolet (EUV, 13.5 nm) photoresists. We determined the FQY of increasingly high levels of an iodonium photoacid generator (PAG) using two acid detection methods. First, base titration methods were used to determine C-parameters for acid generation, and second, an acid-sensitive dye (Coumarin-6) was used to determine the amount of acid generated and ultimately, to determine absorbance and FQYs for both acid detection methods. The RLS performance of photoresists containing increasing levels of PAG up to ultrahigh loadings (5-40 wt% PAG) was evaluated. RLS was characterized using two methods: • K Lup resist performance • Z-Parameter (Z = LER 2Esize* Resolution 3)

Original languageEnglish
Title of host publicationAlternative Lithographic Technologies
DOIs
StatePublished - 2009
EventAlternative Lithographic Technologies - San Jose, CA, United States
Duration: Feb 24 2009Feb 26 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7271

Conference

ConferenceAlternative Lithographic Technologies
Country/TerritoryUnited States
CitySan Jose, CA
Period02/24/0902/26/09

Keywords

  • EUV
  • Film quantum yield
  • RLS tradeoff
  • Ultra high PAG resists

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