Role of atomic arrangements at interfaces on the phase control of epitaxial TiO2 films

B. H. Park; J. Y. Huang; L. S. Li; Q. X. Jia

doi:10.1063/1.1450249

Role of atomic arrangements at interfaces on the phase control of epitaxial TiO₂ films

B. H. Park
, J. Y. Huang
, L. S. Li
, Q. X. Jia

Department of Materials Design and Innovation

University at Buffalo

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Epitaxial rutile-TiO₂ and anatase-TiO₂ films were grown at 800°C on Al₂O₃(1̄102̄) and LaAlO₃(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO₂ and anatase-TiO₂ films on conductive RuO₂ and La _0.5Sr_0.5CoO₃ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO₂ film grown on RuO₂ showed a very broad peak in the visible light region. An epitaxial anatase-TiO₂ film grown on La_0.5Sr_0.5CoO₃ showed a strong peak with a threshold energy of 3.05 eV.

Original language	English
Pages (from-to)	1174-1176
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1450249
State	Published - Feb 18 2002

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title = "Role of atomic arrangements at interfaces on the phase control of epitaxial TiO2 films",

abstract = "Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800°C on Al2O3({\=1}10{\=2}) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La 0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV.",

author = "Park, \{B. H.\} and Huang, \{J. Y.\} and Li, \{L. S.\} and Jia, \{Q. X.\}",

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doi = "10.1063/1.1450249",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Role of atomic arrangements at interfaces on the phase control of epitaxial TiO2 films

AU - Park, B. H.

AU - Huang, J. Y.

AU - Li, L. S.

AU - Jia, Q. X.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800°C on Al2O3(1̄102̄) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La 0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV.

AB - Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800°C on Al2O3(1̄102̄) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La 0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV.

UR - https://www.scopus.com/pages/publications/79956004794

U2 - 10.1063/1.1450249

DO - 10.1063/1.1450249

M3 - Article

SN - 0003-6951

VL - 80

SP - 1174

EP - 1176

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Role of atomic arrangements at interfaces on the phase control of epitaxial TiO₂ films

Abstract

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