Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

John Pointet; Patrice Gonon; Lawrence Latu-Romain; Ahmad Bsiesy; Christophe Vallée

doi:10.1116/1.4843515

Rutile-structured TiO₂ deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

John Pointet
, Patrice Gonon
, Lawrence Latu-Romain
, Ahmad Bsiesy
, Christophe Vallée

Nanoscale Science and Engineering

University at Albany

Joseph Fourier University (UJF)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal-insulator-metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

Original language	English
Article number	01A120
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	32
Issue number	1
DOIs	https://doi.org/10.1116/1.4843515
State	Published - Jan 2014

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abstract = "In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal-insulator-metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.",

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Rutile-structured TiO₂ deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode. / Pointet, John; Gonon, Patrice; Latu-Romain, Lawrence et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 32, No. 1, 01A120, 01.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

AU - Pointet, John

AU - Gonon, Patrice

AU - Latu-Romain, Lawrence

AU - Bsiesy, Ahmad

AU - Vallée, Christophe

PY - 2014/1

Y1 - 2014/1

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AB - In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal-insulator-metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

UR - https://www.scopus.com/pages/publications/84891787252

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DO - 10.1116/1.4843515

M3 - Article

SN - 0734-2101

VL - 32

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

M1 - 01A120

ER -

Rutile-structured TiO₂ deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

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