Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

Vibhor Jain; Peng Cheng; B. J. Gross; R. Camillo-Castillo; J. J. Pekarik; J. W. Adkisson; Qizhi Liu; P. B. Gray; V. Kaushal; D. Harame; Adam W. Divergilio

doi:10.1109/BCTM.2013.6798147

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

Vibhor Jain
, Peng Cheng
, B. J. Gross
, R. Camillo-Castillo
, J. J. Pekarik
, J. W. Adkisson
, Qizhi Liu
, P. B. Gray
, V. Kaushal
, D. Harame
, Adam W. Divergilio

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (f_c) ∼2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported f_c for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ∼5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.

Original language	English
Title of host publication	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	73-76
Number of pages	4
ISBN (Print)	9781479901265
DOIs	https://doi.org/10.1109/BCTM.2013.6798147
State	Published - 2013
Event	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 - Bordeaux, France Duration: Sep 30 2013 → Oct 3 2013

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Conference

Conference	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Country/Territory	France
City	Bordeaux
Period	09/30/13 → 10/3/13

Keywords

BiCMOS
Schottky diodes
SiGe
cutoff frequency
diodes
mm-wave
terahertz (THz)

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10.1109/BCTM.2013.6798147

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Jain, V., Cheng, P., Gross, B. J., Camillo-Castillo, R., Pekarik, J. J., Adkisson, J. W., Liu, Q., Gray, P. B., Kaushal, V., Harame, D., & Divergilio, A. W. (2013). Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency. In 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 (pp. 73-76). Article 6798147 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2013.6798147

@inproceedings{da93212305414a37b66e8610c2de3716,

title = "Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency",

abstract = "High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ∼2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported fc for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ∼5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.",

keywords = "BiCMOS, Schottky diodes, SiGe, cutoff frequency, diodes, mm-wave, terahertz (THz)",

author = "Vibhor Jain and Peng Cheng and Gross, \{B. J.\} and R. Camillo-Castillo and Pekarik, \{J. J.\} and Adkisson, \{J. W.\} and Qizhi Liu and Gray, \{P. B.\} and V. Kaushal and D. Harame and Divergilio, \{Adam W.\}",

year = "2013",

doi = "10.1109/BCTM.2013.6798147",

language = "English",

isbn = "9781479901265",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "73--76",

booktitle = "2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013",

note = "2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 ; Conference date: 30-09-2013 Through 03-10-2013",

}

Jain, V, Cheng, P, Gross, BJ, Camillo-Castillo, R, Pekarik, JJ, Adkisson, JW, Liu, Q, Gray, PB, Kaushal, V, Harame, D & Divergilio, AW 2013, Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency. in 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013., 6798147, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 73-76, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, Bordeaux, France, 09/30/13. https://doi.org/10.1109/BCTM.2013.6798147

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency. / Jain, Vibhor; Cheng, Peng; Gross, B. J. et al.
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 73-76 6798147 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

AU - Jain, Vibhor

AU - Cheng, Peng

AU - Gross, B. J.

AU - Camillo-Castillo, R.

AU - Pekarik, J. J.

AU - Adkisson, J. W.

AU - Liu, Qizhi

AU - Gray, P. B.

AU - Kaushal, V.

AU - Harame, D.

AU - Divergilio, Adam W.

PY - 2013

Y1 - 2013

N2 - High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ∼2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported fc for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ∼5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.

AB - High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ∼2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported fc for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ∼5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.

KW - BiCMOS

KW - Schottky diodes

KW - SiGe

KW - cutoff frequency

KW - diodes

KW - mm-wave

KW - terahertz (THz)

UR - https://www.scopus.com/pages/publications/84899865600

U2 - 10.1109/BCTM.2013.6798147

DO - 10.1109/BCTM.2013.6798147

M3 - Conference contribution

SN - 9781479901265

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 73

EP - 76

BT - 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013

Y2 - 30 September 2013 through 3 October 2013

ER -

Jain V, Cheng P, Gross BJ, Camillo-Castillo R, Pekarik JJ, Adkisson JW et al. Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency. In 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 73-76. 6798147. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2013.6798147

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

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Keywords

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