Skip to main navigation Skip to search Skip to main content

Selective Area Heteroepitaxy of Quantum Dot Lasers on Nano-V-grooved Silicon

  • University of California at Santa Barbara
  • SUNY Polytechnic Institute

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Quantum dot laser structures were selectively grown on nano-V-grooved (001) Si substrates with low dislocation density GaAs buffers that include optimized dislocation filters. High photoluminescence intensity and narrow emission were demonstrated near 1310 nm.

Original languageEnglish
Article numberIW2B.7
JournalOptics InfoBase Conference Papers
StatePublished - 2022
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPR 2022 - Maastricht, Netherlands
Duration: Jul 24 2022Jul 28 2022

Fingerprint

Dive into the research topics of 'Selective Area Heteroepitaxy of Quantum Dot Lasers on Nano-V-grooved Silicon'. Together they form a unique fingerprint.

Cite this