Abstract
Quantum dot laser structures were selectively grown on nano-V-grooved (001) Si substrates with low dislocation density GaAs buffers that include optimized dislocation filters. High photoluminescence intensity and narrow emission were demonstrated near 1310 nm.
| Original language | English |
|---|---|
| Article number | IW2B.7 |
| Journal | Optics InfoBase Conference Papers |
| State | Published - 2022 |
| Event | Integrated Photonics Research, Silicon and Nanophotonics, IPR 2022 - Maastricht, Netherlands Duration: Jul 24 2022 → Jul 28 2022 |
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