SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS.

G. BASTARD; E. E. MENDEZ; L. L. CHANG; L. ESAKI

doi:10.1116/1.571754

SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS.

G. BASTARD
, E. E. MENDEZ
, L. L. CHANG
, L. ESAKI

Physics and Astronomy

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

SELF-CONSISTENT CALCULATIONS, IN THE ELECTRIC QUANTUM LIMIT, OF GASB-INAS-GASB HETEROSTRUCTURES REVEAL THE EXISTENCE OFA SEMICONDUCTOR-TO-SEMIMETAL TRANSITION WHEN THE INAS THICKNESS EXCEEDS 100 A, AS A RESULT OF ELECTRON TRANSFER FROM GASB. UNDER THE EFFECT OF AN INTENSE MAGNETIC FIELD A REVERSE ELECTRON TRANSFER LEADS TO A SEMIMETAL-TO-SEMICONDUCTOR TRANSITION WHICH OCCURS AT A THICKNESS-DEPENDENT CRITICAL FIELD.

Original language	English
Pages (from-to)	531-533
Number of pages	3
Journal	Journal of vacuum science & technology
Volume	V 21
Issue number	N 2
DOIs	https://doi.org/10.1116/1.571754
State	Published - 1982
Event	PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: Jan 27 1982 → Jan 29 1982

Access to Document

10.1116/1.571754

Cite this

@article{3257cd15d810444eb63c328ef81ceea7,

title = "SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS.",

abstract = "SELF-CONSISTENT CALCULATIONS, IN THE ELECTRIC QUANTUM LIMIT, OF GASB-INAS-GASB HETEROSTRUCTURES REVEAL THE EXISTENCE OFA SEMICONDUCTOR-TO-SEMIMETAL TRANSITION WHEN THE INAS THICKNESS EXCEEDS 100 A, AS A RESULT OF ELECTRON TRANSFER FROM GASB. UNDER THE EFFECT OF AN INTENSE MAGNETIC FIELD A REVERSE ELECTRON TRANSFER LEADS TO A SEMIMETAL-TO-SEMICONDUCTOR TRANSITION WHICH OCCURS AT A THICKNESS-DEPENDENT CRITICAL FIELD.",

author = "G. BASTARD and MENDEZ, \{E. E.\} and CHANG, \{L. L.\} and L. ESAKI",

year = "1982",

doi = "10.1116/1.571754",

language = "English",

volume = "V 21",

pages = "531--533",

journal = "Journal of vacuum science \& technology",

issn = "0022-5355",

number = "N 2",

note = "PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH ; Conference date: 27-01-1982 Through 29-01-1982",

}

TY - JOUR

T1 - SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS.

AU - BASTARD, G.

AU - MENDEZ, E. E.

AU - CHANG, L. L.

AU - ESAKI, L.

PY - 1982

Y1 - 1982

N2 - SELF-CONSISTENT CALCULATIONS, IN THE ELECTRIC QUANTUM LIMIT, OF GASB-INAS-GASB HETEROSTRUCTURES REVEAL THE EXISTENCE OFA SEMICONDUCTOR-TO-SEMIMETAL TRANSITION WHEN THE INAS THICKNESS EXCEEDS 100 A, AS A RESULT OF ELECTRON TRANSFER FROM GASB. UNDER THE EFFECT OF AN INTENSE MAGNETIC FIELD A REVERSE ELECTRON TRANSFER LEADS TO A SEMIMETAL-TO-SEMICONDUCTOR TRANSITION WHICH OCCURS AT A THICKNESS-DEPENDENT CRITICAL FIELD.

AB - SELF-CONSISTENT CALCULATIONS, IN THE ELECTRIC QUANTUM LIMIT, OF GASB-INAS-GASB HETEROSTRUCTURES REVEAL THE EXISTENCE OFA SEMICONDUCTOR-TO-SEMIMETAL TRANSITION WHEN THE INAS THICKNESS EXCEEDS 100 A, AS A RESULT OF ELECTRON TRANSFER FROM GASB. UNDER THE EFFECT OF AN INTENSE MAGNETIC FIELD A REVERSE ELECTRON TRANSFER LEADS TO A SEMIMETAL-TO-SEMICONDUCTOR TRANSITION WHICH OCCURS AT A THICKNESS-DEPENDENT CRITICAL FIELD.

UR - https://www.scopus.com/pages/publications/0020156788

U2 - 10.1116/1.571754

DO - 10.1116/1.571754

M3 - Conference article

SN - 0022-5355

VL - V 21

SP - 531

EP - 533

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - N 2

T2 - PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH

Y2 - 27 January 1982 through 29 January 1982

ER -

SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS.

Abstract

Access to Document

Other files and links

Fingerprint

Cite this