Semiconductor technology choices for Ultrawide-Band (UWB) systems

D. L. Harame; X. Wang; B. Jagannathan; J. Perkarik; J. Watts; D. Sheridan; P. Cottrell; D. Greenberg; G. Freeman; K. Newton; M. Graf; E. Mina; A. Joseph; J. Dunn

Semiconductor technology choices for Ultrawide-Band (UWB) systems

D. L. Harame
, X. Wang
, B. Jagannathan
, J. Perkarik
, J. Watts
, D. Sheridan
, P. Cottrell
, D. Greenberg
, G. Freeman
, K. Newton
, M. Graf
, E. Mina
, A. Joseph
, J. Dunn

NY Creates Research Foundation

NY Creates

IBM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology will have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems will be System in a Package. The low cost favors CMOS.

Original language	English
Title of host publication	ICU 2005
Subtitle of host publication	2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings
Pages	725-734
Number of pages	10
State	Published - 2005
Event	ICU 2005: 2005 IEEE International Conference on Ultra-Wideband - Zurich, Switzerland Duration: Sep 5 2005 → Sep 8 2005

Publication series

Name	ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings
Volume	2005

Conference

Conference	ICU 2005: 2005 IEEE International Conference on Ultra-Wideband
Country/Territory	Switzerland
City	Zurich
Period	09/5/05 → 09/8/05

Keywords

CMOS analog Integrated circuits
Millimeter wave bipolar transistor amplifiers
Semiconductor devices
SiGe

Cite this

Harame, D. L., Wang, X., Jagannathan, B., Perkarik, J., Watts, J., Sheridan, D., Cottrell, P., Greenberg, D., Freeman, G., Newton, K., Graf, M., Mina, E., Joseph, A., & Dunn, J. (2005). Semiconductor technology choices for Ultrawide-Band (UWB) systems. In ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings (pp. 725-734). Article 1570078 (ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings; Vol. 2005).

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title = "Semiconductor technology choices for Ultrawide-Band (UWB) systems",

abstract = "UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology will have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems will be System in a Package. The low cost favors CMOS.",

keywords = "CMOS analog Integrated circuits, Millimeter wave bipolar transistor amplifiers, Semiconductor devices, SiGe",

author = "Harame, \{D. L.\} and X. Wang and B. Jagannathan and J. Perkarik and J. Watts and D. Sheridan and P. Cottrell and D. Greenberg and G. Freeman and K. Newton and M. Graf and E. Mina and A. Joseph and J. Dunn",

year = "2005",

language = "English",

isbn = "078039397X",

series = "ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings",

pages = "725--734",

booktitle = "ICU 2005",

note = "ICU 2005: 2005 IEEE International Conference on Ultra-Wideband ; Conference date: 05-09-2005 Through 08-09-2005",

}

Harame, DL, Wang, X, Jagannathan, B, Perkarik, J, Watts, J, Sheridan, D, Cottrell, P, Greenberg, D, Freeman, G, Newton, K, Graf, M, Mina, E, Joseph, A & Dunn, J 2005, Semiconductor technology choices for Ultrawide-Band (UWB) systems. in ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings., 1570078, ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings, vol. 2005, pp. 725-734, ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Zurich, Switzerland, 09/5/05.

Semiconductor technology choices for Ultrawide-Band (UWB) systems. / Harame, D. L.; Wang, X.; Jagannathan, B. et al.
ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings. 2005. p. 725-734 1570078 (ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Semiconductor technology choices for Ultrawide-Band (UWB) systems

AU - Harame, D. L.

AU - Wang, X.

AU - Jagannathan, B.

AU - Perkarik, J.

AU - Watts, J.

AU - Sheridan, D.

AU - Cottrell, P.

AU - Greenberg, D.

AU - Freeman, G.

AU - Newton, K.

AU - Graf, M.

AU - Mina, E.

AU - Joseph, A.

AU - Dunn, J.

PY - 2005

Y1 - 2005

N2 - UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology will have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems will be System in a Package. The low cost favors CMOS.

AB - UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology will have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems will be System in a Package. The low cost favors CMOS.

KW - CMOS analog Integrated circuits

KW - Millimeter wave bipolar transistor amplifiers

KW - Semiconductor devices

KW - SiGe

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SN - 9780780393974

T3 - ICU 2005: 2005 IEEE International Conference on Ultra-Wideband, Conference Proceedings

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BT - ICU 2005

T2 - ICU 2005: 2005 IEEE International Conference on Ultra-Wideband

Y2 - 5 September 2005 through 8 September 2005

ER -

Semiconductor technology choices for Ultrawide-Band (UWB) systems

Abstract

Publication series

Conference

Keywords

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