Abstract
The electronic properties of two-electron shallow impurities (D- centers) in GaAs/AlGaAs multiple-quantum-well structures have been studied via far-infrared magneto-spectroscopy. Several experimental results are reported: the electron occupation of the shallow donor states at low temperature, temperature dependence of the occupancy, many-electron effects and resonant polaron interactions. Comparison with the neutral donor (D0) states is made.
| Original language | English |
|---|---|
| Pages (from-to) | 441-445 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 93 |
| Issue number | 5 |
| DOIs | |
| State | Published - Feb 1995 |
Keywords
- A
- D
- electronic states (localized)
- quantum wells
- semiconductors
Fingerprint
Dive into the research topics of 'Shallow impurities in quasi-two-dimensional systems: D0 and D- states'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver