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Shallow impurities in quasi-two-dimensional systems: D0 and D- states

  • J. P. Cheng
  • , W. J. Li
  • , J. L. Wang
  • , B. D. McCombe
  • , S. Holmes
  • , W. Schaff
  • Massachusetts Institute of Technology
  • SUNY Buffalo
  • Imperial College London
  • Cornell University

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The electronic properties of two-electron shallow impurities (D- centers) in GaAs/AlGaAs multiple-quantum-well structures have been studied via far-infrared magneto-spectroscopy. Several experimental results are reported: the electron occupation of the shallow donor states at low temperature, temperature dependence of the occupancy, many-electron effects and resonant polaron interactions. Comparison with the neutral donor (D0) states is made.

Original languageEnglish
Pages (from-to)441-445
Number of pages5
JournalSolid State Communications
Volume93
Issue number5
DOIs
StatePublished - Feb 1995

Keywords

  • A
  • D
  • electronic states (localized)
  • quantum wells
  • semiconductors

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