Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP

J. F. Chen; J. C. Chen; Y. S. Lee; Y. W. Choi; K. Xie; P. L. Liu; W. A. Anderson; C. R. Wie

doi:10.1063/1.345011

Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP

J. F. Chen
, J. C. Chen
, Y. S. Lee
, Y. W. Choi
, K. Xie
, P. L. Liu
, W. A. Anderson
, C. R. Wie

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Zn-doped Ga_xIn_1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-Ga_xIn_1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E _V+0.84 eV was detected by deep-level transient spectroscopy in a Ga_0.032In_0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.

Original language	English
Pages (from-to)	3711-3716
Number of pages	6
Journal	Journal of Applied Physics
Volume	67
Issue number	8
DOIs	https://doi.org/10.1063/1.345011
State	Published - 1990

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title = "Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP",

abstract = "Zn-doped GaxIn1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E V+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.",

author = "Chen, \{J. F.\} and Chen, \{J. C.\} and Lee, \{Y. S.\} and Choi, \{Y. W.\} and K. Xie and Liu, \{P. L.\} and Anderson, \{W. A.\} and Wie, \{C. R.\}",

year = "1990",

doi = "10.1063/1.345011",

language = "English",

volume = "67",

pages = "3711--3716",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP

AU - Chen, J. F.

AU - Chen, J. C.

AU - Lee, Y. S.

AU - Choi, Y. W.

AU - Xie, K.

AU - Liu, P. L.

AU - Anderson, W. A.

AU - Wie, C. R.

PY - 1990

Y1 - 1990

N2 - Zn-doped GaxIn1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E V+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.

AB - Zn-doped GaxIn1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E V+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.

UR - https://www.scopus.com/pages/publications/36549098080

U2 - 10.1063/1.345011

DO - 10.1063/1.345011

M3 - Article

SN - 0021-8979

VL - 67

SP - 3711

EP - 3716

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP

Abstract

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